Synthesis of Metal Nanoclusters upon Using Ion Implantation

Mazzoldi, P.; Mattei, Giovanni

doi:10.1016/b978-044453057-8.50016-7

Cited by 3 publications

(3 citation statements)

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“…This is shown in Fig. From [17] with permission of Elsevier incoming field) due to the overlapped satellites halos in a direction parallel to the sample surface [12,13]. 10.…”

Section: Core-satellite For Nonlinear Optical Propertiesmentioning

confidence: 99%

“…Ion implantation is a very efficient technique for both the synthesis and the processing of nanoparticle-based materials [16,17], because it can introduce any desired amount of the guest phase in a host matrix, without thermodynamic limitations typical of other synthesis techniques, due to the fact that the ion implantation works under nonequilibrium conditions. The control of cluster size with dimensions in the nanometer range either during the synthesis process or after subsequent thermal annealing is one of the challenging issues of nanocluster technology, as the electronic and optical properties of the NPs depend strongly on their dimensions.…”

Section: Metal-nanoparticle Synthesis By Ion Implantationmentioning

confidence: 99%

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Metal Nanoclusters for Optical Properties

Mattei

Mazzoldi

Bernas

2009

Topics in Applied Physics

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This chapter is focused on the use of ion beam processing for controlling the linear and nonlinear optical properties of different nanostructures based on metallic clusters embedded in silica. Three case studies will be presented: the first is the modification of the surface plasmon resonance of metallic nanoclusters by direct implantation or irradiation. The second is the far-field and local-field modification by means of controlled ion irradiation of bi-metallic nanoclusters. The last example deals with the synthesis of ordered plasmonic nanostructures using ion implantation and/or irradiation. These three examples are a sort of hierarchical approach to the control of the optical properties of nanostructures based on nanoparticles, starting from the synthesis of the functional building block of our approach, i.e. randomly positioned metal nanoparticles in silica, to end at the last level with the formation by ion implantation ordered arrays (chains or planar 2D assembly). In all these examples, ion implantation demonstrates to be not only a simple synthesis technique, but a very powerful processing tool for obtaining new functional properties. A brief description of the theoretical approach to the comprehension of the light-particle interaction from a semi-classical point of view will be given to aid the interpretation of the experimental results

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“…This is shown in Fig. From [17] with permission of Elsevier incoming field) due to the overlapped satellites halos in a direction parallel to the sample surface [12,13]. 10.…”

Section: Core-satellite For Nonlinear Optical Propertiesmentioning

confidence: 99%

Section: Metal-nanoparticle Synthesis By Ion Implantationmentioning

confidence: 99%

Metal Nanoclusters for Optical Properties

Mattei

Mazzoldi

Bernas

2009

Topics in Applied Physics

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“…Ion implantation is a widely used non-equilibrium technique for doping semiconductors and insulators for electronic and optical applications [1,2]. Formation of point and extended defects is inherent in ion bombardment and influences all steps in device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Direct evidence by positron annihilation spectroscopy of defect distributions deeper thanR_pin Ar⁺implanted silica glass

Mazzoldi

Mattei

Ravelli

et al. 2009

J. Phys. D: Appl. Phys.

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Positron annihilation spectroscopy was used to depth profile the modification of intrinsic structural nanovoids in silica glass implanted with Ar+ ions at different fluences and implantation energies. Beyond an expected defect distribution below the ion projected range Rp, a second defect distribution extending more than two times deeper than Rp was revealed. This second defective layer was found to be related to recoiled oxygen atoms whose diffusion is probably increased by the stress gradient induced by the compaction of the first layer.

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