Synthesis of metal silicides using polyhedral oligomeric silsesquioxane as a silicon source for semi-hydrogenation of phenylacetylene

Wang, Zhiqiang; Cheng, Ming; Zhang, Xu; Guo, Zhenbo; Zhou, Zhen; Zhang, Minghui

doi:10.1039/d1qi01586a

Cited by 2 publications

(1 citation statement)

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“…[14][15][16] To address this issue, the process technology of metal silicides was modulated to optimize their electrical properties. [17][18][19] We deposited interconnecting metals within the trench, with SiO 2 layers on the top and sides of the silicon pillars serving as hard masks. This approach enabled the formation of BBLs.…”

Section: Introductionmentioning

confidence: 99%

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Tian,

Sun,

Ping

et al. 2024

Jpn. J. Appl. Phys.

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With the continuous evolution of Dynamic Random-Access Memory (DRAM) devices, there is a growing demand for increased storage density per unit area. In this work, we aim to create a high-density array of vertical channel transistors using advanced DRAM process technology. A thickness of SiO2 (X+3 nm) was determined for the protective layer, which shows best protecting effect. We employed chemical vapor deposition (CVD) to grow thin Ti films on the array's bottom. To reduce the resistance of buried bit line (BBL), we formed an high-quality metal silicide using a thermal annealing process combined with self-align technology. Nanoprobe measurements results show an average resistance of approximately 60 Ω of the bit line of each cell transistor, where the low series resistance can improve device performance. Our work involved optimizing the protective layers and achieving high-performance buried bit lines, paving the way for the development of high-density DRAMs.

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Section: Introductionmentioning

confidence: 99%

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Tian,

Sun,

Ping

et al. 2024

Jpn. J. Appl. Phys.

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Prussian Blue nanoparticles supported on a hybrid platform of graphene oxide and cubic silsesquioxane applied to Diuron detection

Maraldi

Carmo

2023

Materials Research Bulletin

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Synthesis of metal silicides using polyhedral oligomeric silsesquioxane as a silicon source for semi-hydrogenation of phenylacetylene

Abstract: Metal silicides as a new typical of intermetallic compound has great potential in catalytic reaction. Here, an efficient route for synthesizing metal silicides (such as Pd2Si, RuxSi, PtxSi and Ni2Si)...

Cited by 2 publications

References 47 publications

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

Prussian Blue nanoparticles supported on a hybrid platform of graphene oxide and cubic silsesquioxane applied to Diuron detection

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