Synthesis of MgO thin films grown by SILAR technique

Güney, Harun; İskenderoğlu, Demet

doi:10.1016/j.ceramint.2018.01.210

Cited by 31 publications

(13 citation statements)

References 24 publications

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“…Because, as the defect level in the structure increases, the scattering effect of the light will increase, which causes a decrease in the band gap. The band gap values obtained for MgO films are consistent with the studies in the cited literature (Ahmed et al, 2016;Güney & İskenderoğlu, 2018;Visweswaran et al, 2020;Taşer et al, 2021).…”

Section: Bulgular Ve Tartışmasupporting

confidence: 90%

“…The average crystallite size (D) of MgO films corresponding to the (200) plane was calculated from the XRD data by Debye-Scherrer's equation (1) (Güney & İskenderoğlu, 2018). The average crystallite size increased from 7.12 nm to 10.78 nm with increasing working pressure, while FWHM decreased from 1.2 to 0.8.…”

Section: Bulgular Ve Tartışmamentioning

confidence: 99%

“…The MgO thin films have been produced by various mechanisms and methods such as thermal oxidation (Patil & Puri, 2011), electrochemical deposition (Chowdhury & Kumar, 2006), atomic layer deposition (Kim et al, 2013), chemical vapor deposition (Boo et al, 1999), e-beam evaporation (Cho et al, 2010), RF/DC magnetron sputtering (Eun et al, 2003;Lee et al, 2003;Nam & Han 2003), electrostatic spray deposition (Kim et al, 2000), sol-gel (Ho et al, 1997;Bazhan et al, 2013) and successive ionic layer adsorption and reaction (SILAR) (Güney & İskenderoğlu, 2018). Among all these methods, magnetron sputtering is particularly suitable for producing thin films with high homogeneity for electronic applications.…”

Section: Introduction Girişmentioning

confidence: 99%

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Production of high-transparent MgO films by radio-frequency sputtering method

Şenaslan¹,

Çelik²,

Taşdemir³

2022

Gümüşhane Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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Magnesium oxide (MgO) thin films were deposited on silicon and glass substrates by the radio frequency (RF) sputtering method. The MgO films were annealed at 400 ⁰C for 4h. The effect of working pressure on the structure and optical properties of MgO films was investigated. Structural characterization of thin films was determined using the X-ray diffraction (XRD) method. XRD results showed the presence of dominant peaks corresponding to the ( 200) and ( 220) lattice planes of MgO. However, peaks corresponding to ( 111), ( 311) and ( 222) lattice planes of the MgO also appeared in the films deposited at low pressure. It was determined that the average crystal size decreased as the working pressure reduced, while the deposition rate increased. SEM analysis showed that the microstructure of the nano-spherical MgO film transformed into a coarse-grained nano-pyramidal shape after annealing. The optical properties of MgO films were investigated by UV-Vis spectroscopy. Accordingly, it was determined that the absorption threshold of the films was around 310 nm wavelength and the optical band gap of the films varied between 4.07 and 4.14 eV. As a result, MgO films with high transmittance reaching an average of 95% in the visible region were obtained.

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Section: Bulgular Ve Tartışmasupporting

confidence: 90%

Section: Bulgular Ve Tartışmamentioning

confidence: 99%

Section: Introduction Girişmentioning

confidence: 99%

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Production of high-transparent MgO films by radio-frequency sputtering method

Şenaslan¹,

Çelik²,

Taşdemir³

2022

Gümüşhane Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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“…Following the Maxwell Garnett approach [ 89 ] (see Supplementary Materials for further details), we have computed the imaginary part of the Ag NP in-plane polarizability for different values of the NP AR [ 90 ] and of the matrix dielectric function. Indeed, as occurs in the case of other metal oxide materials, the MgO UV–Vis dielectric function is known to vary with the film thickness t, becoming smaller than in the bulk for films thinner than t~250 nm [ 91 , 92 ]. In Figure 6 c, the imaginary part of the NP polarizability is calculated for different values of AR ranging between 1.5 and 2.5, using the dielectric constants of bulk Ag and MgO, taken from reference [ 93 ].…”

Section: Resultsmentioning

confidence: 99%

Ag/MgO Nanoparticles via Gas Aggregation Nanocluster Source for Perovskite Solar Cell Engineering

et al. 2021

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Nanocluster aggregation sources based on magnetron-sputtering represent precise and versatile means to deposit a controlled quantity of metal nanoparticles at selected interfaces. In this work, we exploit this methodology to produce Ag/MgO nanoparticles (NPs) and deposit them on a glass/FTO/TiO2 substrate, which constitutes the mesoscopic front electrode of a monolithic perovskite-based solar cell (PSC). Herein, the Ag NP growth through magnetron sputtering and gas aggregation, subsequently covered with MgO ultrathin layers, is fully characterized in terms of structural and morphological properties while thermal stability and endurance against air-induced oxidation are demonstrated in accordance with PSC manufacturing processes. Finally, once the NP coverage is optimized, the Ag/MgO engineered PSCs demonstrate an overall increase of 5% in terms of device power conversion efficiencies (up to 17.8%).

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“…[162] During fabrication, the use of tungstic acid as cationic precursor gave rise to high surfacearea WO 3 structures when reacted with a NaOH solution used as anionic precursor. Finally, pure investigative studies on the effect of SILAR parameters on the physical and chemical properties of the deposited films have also been reported for other oxides, such as MgO [163] and SnO. [40] The experimental conditions for the binary oxides discussed thus far are presented in Table 5.…”

Section: Binary Oxidesmentioning

confidence: 99%

SILAR Deposition of Metal Oxide Nanostructured Films

Ratnayake

Ren

Colusso

et al. 2021

Small

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Methods for the fabrication of thin films with well controlled structure and properties are of great importance for the development of functional devices for a large range of applications. SILAR, the acronym for Successive Ionic Layer Adsorption and Reaction, is an evolution and combination of two other deposition methods, the Atomic Layer Deposition and Chemical Bath Deposition. Due to a relative simplicity and low cost, this method has gained increasing interest in the scientific community. There are, however, several aspects related to the influence of the many parameters involved, which deserve further deepening. In this review article, the basis of the method, its application to the fabrication of thin films, the importance of experimental parameters, and some recent advances in the application of oxide films are reviewed. At first the fundamental theoretical bases and experimental concepts of SILAR are discussed. Then, the fabrication of chalcogenides and metal oxides is reviewed, with special emphasis to metal oxides, trying to extract general information on the effect of experimental parameters on structural, morphological and functional properties. Finally, recent advances in the application of oxide films prepared by SILAR are described, focusing on supercapacitors, transparent electrodes, solar cells, and photoelectrochemical devices.

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Synthesis of MgO thin films grown by SILAR technique

Cited by 31 publications

References 24 publications

Production of high-transparent MgO films by radio-frequency sputtering method

Production of high-transparent MgO films by radio-frequency sputtering method

Ag/MgO Nanoparticles via Gas Aggregation Nanocluster Source for Perovskite Solar Cell Engineering

SILAR Deposition of Metal Oxide Nanostructured Films

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