2020
DOI: 10.1039/d0ra01988g
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Synthesis of nano-sized tungsten oxide particles encapsulated in a hollow silica sphere and their photocatalytic properties for decomposition of acetic acid using Pt as a co-catalyst

Abstract: We present a procedure for the synthesis of WO3 nanoparticles encapsulated in a hollow silica sphere, and their unique photocatalytic properties.

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Cited by 7 publications
(2 citation statements)
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“…The value of n, an integer, describes the direct (n = 1/2) or indirect (n = 2) transition. 41 Further, for WO 3 , which is an indirect semiconductor, n = 2 is used to determine the E g values. The as-determined band gap values of HTO, GHTO, and GTO are 3.27, 2.18, and 2.58 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The value of n, an integer, describes the direct (n = 1/2) or indirect (n = 2) transition. 41 Further, for WO 3 , which is an indirect semiconductor, n = 2 is used to determine the E g values. The as-determined band gap values of HTO, GHTO, and GTO are 3.27, 2.18, and 2.58 eV, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Utilizing the Kubelka–Munk (K–M) model, the indirect band gap values were determined by extrapolation of a linear fit to the rising edges of the respective (α h ν) 1/2 vs photon energy ( h ν) plots (Figure e) of the eq : α italichv = A false( italichv E g false) n / 2 where A , α, v, and h are the constant, absorption coefficient, light frequency, and the Planck constant, respectively. The value of n , an integer, describes the direct ( n = 1/2) or indirect ( n = 2) transition . Further, for WO 3 , which is an indirect semiconductor, n = 2 is used to determine the E g values.…”
Section: Resultsmentioning
confidence: 99%