Synthesis of Polycrystalline Silicon Carbide (SiC) Thin Films Using Pulsed Laser Deposition

Abstract

Silicon carbide (SiC), similar to diamond and other ceramic materials, is a material with excellent functional properties. SiC films based devices can be used for various applications ranging from automobile, aerospace industry, power delivery systems, photovoltaic, and microelectromechanical systems. The growth of bulk single crystals of SiC is difficult, but several techniques, such as chemical vapor deposition (CVD), electron beam CVD (EB-CVD), pulsed laser deposition (PLD), are used to produce SiC thin films for various functional applications. In the PLD technique, high substrate temperature ([600°C) is required to produce crystalline SiC thin films and the onset of the large-scale crystallization has been detected above 800°C. The PLD technique has been extended for SiC film deposition on various substrates, such as Si (100), alkali-free glass materials. A review on PLD of SiC thin film clearly show that it is possible to deposit 3C-SiC (b-SiC) and 4H-SiC (a-SiC) thin films by controlling various process parameters, such as laser fluence and substrate temperature. Recent advances in the PLD technique combined with the surface annealing can improve the characteristics of SiC thin films for photovoltaic and electronic device-related applications.

Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

“…[3][4][5][6][7][8][9][10][11] The versatility of PVD methods has enabled the development of various functional thin films such as tungsten carbide, silicon carbide, chromium carbide, titanium carbide, cubic boron nitride, carbon nitride, and silicon nitride films. [12][13][14][15][16][17][18] We have also studied thin-film preparation using PLD, and deposited high-quality functional thin films. [19][20][21][22][23][24][25][26][27] In PVD, high-density bulk targets are generally used.…”

Preparation of mixed bismuth and iron thin films by pulsed laser deposition using powder targets

“…[7][8][9] The versatility of the PLD method has enabled the development of various functional thin films such as tungsten carbide, silicon carbide, chromium carbide, titanium carbide, cubic boron nitride, carbon nitride, and silicon nitride. [10][11][12][13][14][15][16][17][18] We have also been studying thin-film preparation by the PLD method, and have deposited high-quality functional thin films. [19][20][21][22][23][24] PLD involves the use of a high-power pulsed laser beam focused inside a vacuum chamber.…”