1995
DOI: 10.1007/bf00351546
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Synthesis of silicon oxynitride from a polymeric precursor

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Cited by 10 publications
(7 citation statements)
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“…show a unique high-temperature stability in terms of restricting crystallization and subsequent phase partitioning under an inert atmosphere of N 2 or Ar [20,21]. On the other hand, very limited study has been done for the crystallization behavior of polymer-derived ternary Si–O–N or quaternary Si–O–C–N systems [22,24]. Therefore, high-temperature crystallization behavior above 1000 °C of the present EtOSZ-derived amorphous Si–O–C–N was further studied.…”
Section: Resultsmentioning
confidence: 99%
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“…show a unique high-temperature stability in terms of restricting crystallization and subsequent phase partitioning under an inert atmosphere of N 2 or Ar [20,21]. On the other hand, very limited study has been done for the crystallization behavior of polymer-derived ternary Si–O–N or quaternary Si–O–C–N systems [22,24]. Therefore, high-temperature crystallization behavior above 1000 °C of the present EtOSZ-derived amorphous Si–O–C–N was further studied.…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, polymerization and cross-linking provide a means to vary the specific properties of the pre-ceramic compounds, such as solubility, fusibility, or viscosity, extensively providing the versatility in processing and shaping capabilities, including thin film and long fiber syntheses that are similar to that successfully achieved with polymer materials. In this route, copolymers of the methylcyclosiloxanes and methylcyclolosilazanes [22], poly(Si-isocyanato-Si-methylpolysilazane) [23], and polysilyloxycarbodiimide [24] were synthesized and successfully converted to both amorphous SiO x N y and crystalline Si 2 N 2 O. Perhydropolysilazane (–SiH 2 –NH–) was also found as a useful starting polymer to fabricate dense and hydrophilic SiO x N y bond coat in a double-layer EBC system, which showed outstanding performance in long-term static oxidation tests at 800 °C [25]. …”
Section: Introductionmentioning
confidence: 99%
“…Besides, the intensity of NH diminished, which was caused by the release of ammonia at about 150–500°C 20. As shown in Figure 5 (Curve d), the intensity of SiCH 3 decreased, and the peaks of CH 3 and CH 2  disappeared due to the free radical reaction that occurred at the temperature of 400–800°C,21 whereas the peak of SiH appeared again, which is probably owing to the decomposition of SiCH 3 into SiH 10. As shown in Figure 5 (Curve f), when the precursors were pyrolyzed at 1000°C, the organic groups completely disappeared and the structure for ceramics was fully formed.…”
Section: Resultsmentioning
confidence: 91%
“…The ceramic has found versatile applications in the fields of high‐temperature resistant ceramic composite, high‐performance fiber, and dielectric film 2–5. Various approaches to silicon oxynitride ceramic, for example, nitridation of silicon or silicon dioxide at elevated temperature,6, 7 solid‐phase reaction between silicon nitride and silicon dioxide aided by metal oxides,8–10 Chemical vapor deposition (CVD) process,5 and polymeric precursor route11–16 have been reported. Among them, the polymeric precursor route, namely fabrication of ceramics by pyrolysis of polymeric precursor, has drawn great interest in recent years.…”
Section: Introductionmentioning
confidence: 99%
“…The reported polymeric precursors for the ceramic generally contain organic groups. For example, by pyrolysis of the copolymer synthesized from polymethylsiloxane and polymethylsilazane at 1660°C under N 2 atmosphere, Yu et al obtained α‐Si 3 N 4 /Si 2 N 2 O composite 11–14. While Gunji et al prepared Si 2 N 2 O ceramic upon treatment of an isocyanato group‐containing polymeric precursor above 900°C under NH 3 or N 2 atmosphere 15.…”
Section: Introductionmentioning
confidence: 99%