Synthesis of SiOF nanoporous ultra low-k thin film

Mhaisagar, Yogesh S.; Mahajan, Ashok M.

doi:10.1007/s10854-013-1508-4

Cited by 6 publications

(2 citation statements)

References 22 publications

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“…[3] Over the past two decades, the conventional path to engineer lowk materials included fluorine or carbon incorporation into the SiO 2 networks. [4,5] While continuous development in that front enabled the achievement of scalable k values close to two by mostly increasing the porosity, [6][7][8] consequent degradations of chemical and mechanical robustness were observed. [9,10] For next generations, alternative materials consisting of low atomic number (Z) constituents were shown to be promising to exhibit low k values while also sustaining desirable mechanical properties due to their low electron density and high packing density.…”

Section: Introductionmentioning

confidence: 99%

Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

Lin

Hsu

Huang

et al. 2022

Adv Materials Technologies

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The implementation of ultralow dielectric constant (k value ≈ 2) materials to reduce signal propagation delay in advanced electronic devices represents a critical challenge in next generations of microelectronics technologies. The introduction of well‐stacked and low polarity molecules that do not compromise film density may lead to improvements and desirable material engineering, as conventional porous SiOx derivatives exhibit detrimental degradation of thermo‐mechanical properties when their k values are further scaled down. This work presents a systematic engineering approach for controlling ultralow‐k amorphous boron nitride (aBN) deposition on 300 mm Si platforms. The results indicate that aBN grown from borazine precursor exhibits ultralow dielectric constant ≈2, high density, excellent mechanical strength, and extended thermodynamic stability. Unintentional boron ion doping during plasma dissociation that may induce artificial reductions of k value on n‐type substrates is alleviated by employing a remote microwave plasma process. Moreover, the adoption of low growth rate processes for ultralow‐k aBN deposition is found to be critical to provide for the superior mechanical strength and high density, and is attributed to the formation of hexagonal ring stacking frameworks. These results pave the way and offer engineering solutions for new ultralow‐k material introduction into future semiconductor manufacturing applications.

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Section: Introductionmentioning

confidence: 99%

Ultralow‐k Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform

Lin

Hsu

Huang

et al. 2022

Adv Materials Technologies

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“…The density (ρ) of the deposited low-k films was calculated from measured RI (𝜂) of the respective samples by using Eq. 1 [11][12]. TEOS+MTES Furthermore, the dielectric constant (k) of the deposited low-k films has been extracted from the measured RI (𝜂 ) value for each sample by using Eq.…”

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confidence: 99%

Preparation and Characterization of Low Dielectric Constant Films Using Silicon Sources

Lin

et al. 2020

MSF

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Effect of various silicon sources, such as TEOS, MTES mixed with TEOS and 1,3,5-tris(triethoxymethyl) on SiO2 films was investigated. The synthesized solutions were used as silicon sources to prepare silica-like backbone films. The investigation showed that all precursors can able to produce the flat and uniform films. An FTIR spectrum confirmed the formation of SiO2 in film matrix. The results indicated that the internal microstructure of each film is different. The incorporation of less polar bonds such as F and C was carried out using various Si sources, while the introduction of these sources confirmed through FTIR spectra. Optical properties of the films were carried out by using ellipsometric porosometry (EP) measurement. The leakage current density for the films prepared by using TEOS, MTES and 135TTEB was observed to be 2.8 × 10-7 A/cm2, 2.9 × 10-8 A / cm2, and 4.1 × 10-6 A / cm2, respectively, at 1 MV/cm electric field strength by the IV curves obtained by semiconductor characterization after fabricating MIS devices. The calculated dielectric constants from RI of the deposited SiO2 films were 2.0, 1.9 and 2.5 respectively. When the microstructure of the precursor solution changed, the introduction of atomic morphology or terminal inerted group ratio changed the internal bridging mode of SiO2, and thereby significantly reduced the dielectric constant and improved insulation.

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