Synthesis of SnS2 thin film via non vacuum arrested precipitation technique for solar cell application

Hydrothermally synthesized nanocrystalline photoactive SnS2 thin films: effect of surface directing agents

“…This improves growth on the thin film. 16 Initially, growth rate is slow until the formation of critical nuclei takes place at nucleating sites on the substrate. Formation of the SnS 2 films takes place via Ostwald's ripening law.…”

“…There are three stable stoichiometric compounds of the Sn-S system, which belong to the CdI 2 structure, 15 where they differ in the ratios of tin (Sn) and sulphur (S) contents. Tin disulphide exists in single crystalline and polycrystalline forms and exhibits n-type conductivity 16 with an absorption coefficient of 10 4 cm À1 . Tin dichalcogenide is a layered metal chalcogenide containing chemically inert layers 17 where a layer by layer arrangement of S and Sn atoms occurs with a hexagonal structure that provides a stacking sequence of Sn-S-Sn; in crystals, along the 'c' direction, Weak van der Waals forces bind the Sn-S-Sn sandwiched layers together.…”

“…For the synthesis of a particular SnS 2 compound, there are many promising synthesis methods available both via physical and chemical routes. Spray pyrolysis, 19 spin coating, 20 electrodeposition, 21 and atomic layer deposition 22 are counted among the physical methods of synthesis, whereas chemical synthesis techniques include deep coating, SILAR, 23 the arrested precipitation technique, 16 chemical solution processing, chemical vapour deposition, 24 hydrothermal synthesis, 15 etc. ; from these, we were looking for a facile, low cost, non-toxic and time saving method, and the hydrothermal technique holds much potential.…”

Photoelectrochemical (PEC) Investigation of Ga‐Doped MoBi2Se5 Thin Films Deposited by Arrested Precipitation Technique

“…A typical synthetic procedure of MoBi (2‐ x ) Ga x Se 5 thin films was briefly described as; the metal TEA complexes were prepared as per our earlier report. [ 19,20 ] In 100 mL reaction container, 1 mL of 0.05 m Mo‐TEA, 19 mL of 0.05 M Bi‐TEA complex solution, 20 mL 0.25 M Na 2 SeSO 3 , and variable volumes of ( x = 0.0, 0.02, 0.04, 0.06, 0.08, and 0.10 mL) 0.05 M Ga‐TEA complex solution was added. The pH of the solution was adjusted to 9.80 ± 0.02 by using 30% liquid ammonia and resultant solution was diluted to 60 mL by using distilled water; few milliliters of ammonium acetate was added to the same solution to maintain constant pH throughout reaction.…”

Application of facile solution-processed ternary sulfide Ag8SnS6 as light absorber in thin film solar cells

“…SnS 2 is a binary sulfide light absorber which also has a suitable band gap and an absorption coefficient of more than 10 4 cm −1 . The synthesis of SnS 2 demands high cost vacuum techniques and the SnS 2 solar cell based on precipitation chemical method still presented a limited PCE of 0.0023% [39]. Different from SnS 2 , ATS-based devices shows a reproducible PCE of about 0.25% after optimization.…”