Synthesis of SnSe2 thin films by thermally induced phase transition in SnSe

Sharma, Jeewan; Singh, Randhir; Singh, Harinder; Singh, Tejbir; Singh, Prabhdeep; Thakur, Anup; Tripathi, S. K.

doi:10.1016/j.jallcom.2017.06.344

Cited by 30 publications

(3 citation statements)

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“…Anisotropic two-dimensional (2D) materials have recently attracted considerable interest resulting from their unique combinations of axis-dependent electrical, optical, and thermoelectric properties. , As a representative of layered IV–VI chalcogenides, tin selenide (SnSe) crystals possessed a layered structure with atoms arranged in a distorted NaCl structure ( Pbnm group). , 2D SnSe is an attractive binary p-type semiconductor material with significant anisotropy and exhibits potential applications in thermoelectric devices, solar cells, energy storage devices, etc . − Nevertheless, its widespread applications have been limited by the intricate synthesis of 2D SnSe. , Toxic reagents and surfactants were frequently involved in the liquid-phase routes. ,,, The Sn(II) compounds tend to be oxidized to Sn(IV) compounds during the synthesis; thus, it becomes very challenging to control the composition or phase to obtain pure SnSe. − Meanwhile, 2D SnSe single crystals can be prepared with physical vapor deposition at higher temperatures. ,, Chemical vapor deposition (CVD) is another promising method for synthesizing 2D SnSe with target requirements. Due to the stronger interlayer van der Waals forces (exfoliation energy, 151.8 meV/atom), the lateral size of the 2D SnSe nanosheets is small (<10 μm) or the nanosheets are thick (>9 nm). , Hence, it is highly desirable to develop a facile and reliable method to synthesize 2D SnSe crystals with large size and few-layered thickness for further exploring their anisotropic performance.…”

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Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures

et al. 2021

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The controlled anisotropic growth of two-dimensional (2D) materials along a specific crystal axis is very crucial to explore the axis-dependent performance, which derives from the difference of atom arrangement in different crystal axes, while the relevant research is still insufficient. Here, we demonstrated a systematic investigation on the controllable anisotropic growth of 2D SnSe along different axis directions from both the experimental and theoretical perspectives. The anisotropy growth of 2D SnSe was attributed to the difference in atomic structures and bonding features between the zigzag edge (along the b-axis) and armchair edge (along the c-axis), as well as the chemical inertness of the base plane in the a-axis. Scanning transmission electron microscopy (STEM) images further verified that the long side of rectangular 2D SnSe is an armchair edge and the short side is a zigzag edge. The growth rates along the b-and c-axes could be effectively adjusted by hydrogen, attributed to the difference in desorption energy between hydrogen and different edge structures. The higher hydrogen concentration led to a shorter b-axis and a longer c-axis. The morphologies of 2D SnSe could be regulated in the range from square nanosheets to linear nanowires. In terms of the a-axis, 2D SnSe was precisely limited to a minimum value of 7.42 nm via a one-step rapid cooling method and could be further thinned to a bilayer using a two-step method with an additional annealing etching step. This study has demonstrated a facile strategy toward the structure-dependent controllable growth of 2D anisotropic materials, which shed new light on the orientation judgment and axisdependent mechanism of the crystal axis of anisotropic materials.

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Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures

et al. 2021

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“…These materials experience structural change together with a significant variation in their optical and electrical characteristics under external stimulus such as pressure [6,7], thermal annealing [2], γ-ray irradiation [8], laser treatment [9], proton irradiation [10], swift heavy ion-irradiation (SHI) [11], etc. Annealing causes variation in the properties of synthesized materials as well as deposited thin films [12][13][14][15], while irradiation with light of suitable energy can results in various photo induced phenomena [16,17]. SHI-irradiation is known to modify the structural, morphological, optical and electrical properties of materials depending upon the ion mass, ion fluence and its energy [11,18,19].…”

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Altered the structural, morphological and optical properties of SbSe thin films through swift heavy ion irradiation

Singh

et al. 2023

Phys. Scr.

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Chalcogenide based phase change materials are gaining attention due to their ability to exhibit expeditious and reversible structural transition from amorphous to crystalline phase. This work included the effect of swift heavy silver (Ag9+) ion-irradiation (120 MeV), at various fluences (5E11, 1E12, 5E12 and 1E13 ions/cm2) on the structural, optical and morphological properties of pristine and annealed (250 ◦C) SbSe thin films. The pristine films undergo a structural transition from amorphous to crystalline upon annealing and from crystalline to amorphous upon irradiation of annealed films. Structural transition caused by annealing and ion-irradiation resulted in a drastic change in morphology and optical properties. The annealed films exhibited less transmission than the pristine and irradiated films, which increased with increase in ion-irradiation fluences because of phase transition. After irradiation, the optical band decreased for pristine thin films, because the forbidden gap defect concentration has increased, but increased after irradiating the annealed thin films that may be due to annealing out of dense localized defect states. The significant optical contrast upon phase transition in near infrared region can be utilized for different optoelectronic applications.

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“…The flexible structure of chalcogenide is responsible for this phase transition. The phase transition in chalcogenide thin films is achieved by vacuum annealing [34], pressure [35] etc. Such phase transition can also be achieved by incorporation of suitable dopant with proper content in chalcogenide alloys [36].…”

Section: Introductionmentioning

confidence: 99%

Composition dependent structural phase transition and optical band gap tuning in InSe thin films

Singh

et al. 2019

Heliyon

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Bulk alloys of InxSe100-x (x = 5, 10, 20, 30, 40 and 50) are prepared using melt quenching technique. Thin films having thickness ~750 nm of these prepared bulk alloys are fabricated using thermal evaporation technique on glass substrate. The as-deposited InxSe100-x thin films with x ≤ 40 are amorphous and In50Se50 thin film is crystalline in nature verified from X-ray diffraction (XRD). The change in morphology of deposited thin films with indium content also verifies structural phase transition and found that the phase transition started with x = 40 which is not detected in XRD pattern. The drastic change in transmission is found with 50% indium content. In50Se50 thin film has less than 30% transmission whereas other films are highly transparent. Optical band gap is calculated using Tauc's plot and decrease in optical band gap is observed with indium content. The variation of optical band gap from 1.88 eV to 1.12 eV is achieved with indium content of 5%–50%. The structural transition and change in optical band gap depict that InSe thin films are potential candidates in various technological applications.

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Synthesis of SnSe2 thin films by thermally induced phase transition in SnSe

Cited by 30 publications

References 44 publications

Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures

Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures

Altered the structural, morphological and optical properties of SbSe thin films through swift heavy ion irradiation

Composition dependent structural phase transition and optical band gap tuning in InSe thin films

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