Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3

Crozier, Peter; Tolle, John; Kouvetakis, John; Ritter, Cole

doi:10.1063/1.1736314

Cited by 69 publications

(55 citation statements)

References 17 publications

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“…13 Based on this information, other research groups have been able to develop scaling algorithms and general equations valid for larger groups of molecules. Nevertheless, hardly any information exists on the metalcarrying compounds used in EBID, in particular, W͑CO͒ 6 and Fe͑CO͒ 5 . This lack of information caused the few authors concerned with EBID resolution to use very simplistic threshold functions to replace the real cross sections 14,15 or to even abandon their research at this stage.…”

Section: Electron-impact-induced Dissociationmentioning

confidence: 99%

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Spatial resolution limits in electron-beam-induced deposition

Silvis-Cividjian

Hagen

Kruit

2005

Journal of Applied Physics

101

116

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Electron-beam-induced deposition ͑EBID͒ is a versatile micro-and nanofabrication technique based on electron-induced dissociation of metal-carrying gas molecules adsorbed on a target. EBID has the advantage of direct deposition of three-dimensional structures on almost any target geometry. This technique has occasionally been used in focused electron-beam instruments, such as scanning electron microscopes, scanning transmission electron microscopes ͑STEM͒, or lithography machines. Experiments showed that the EBID spatial resolution, defined as the lateral size of a singular deposited dot or line, always exceeds the diameter of the electron beam. Until recently, no one has been able to fabricate EBID features smaller than 15-20 nm diameter, even if a 2-nm-diam electron-beam writer was used. Because of this, the prediction of EBID resolution is an intriguing problem. In this article, a procedure to theoretically estimate the EBID resolution for a given energetic electron beam, target, and gaseous precursor is described. This procedure offers the most complete approach to the EBID spatial resolution problem. An EBID model was developed based on electron interactions with the solid target and with the gaseous precursor. The spatial resolution of EBID can be influenced by many factors, of which two are quantified: the secondary electrons, suspected by almost all authors working in this field, and the delocalization of inelastic electron scattering, a poorly known effect. The results confirm the major influence played by the secondary electrons on the EBID resolution and show that the role of the delocalization of inelastic electron scattering is negligible. The model predicts that a 0.2-nm electron beam can deposit structures with minimum sizes between 0.2 and 2 nm, instead of the formerly assumed limit of 15-20 nm. The modeling results are compared with recent experimental results in which 1-nm W dots from a W͑CO͒ 6 precursor were written in a 200-kV STEM on a 30-nm SiN membrane.

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Section: Electron-impact-induced Dissociationmentioning

confidence: 99%

“…We explained this 1 by analyzing the role of secondary electrons in the process and were subsequently able to break this limit and write sub-5-nm contamination lines and dots by changing the process parameters. 2 Since then, other authors [3][4][5] have also written metal structures as small as 3.5 nm.…”

Section: Introductionmentioning

confidence: 99%

Spatial resolution limits in electron-beam-induced deposition

Silvis-Cividjian

Hagen

Kruit

2005

Journal of Applied Physics

101

116

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“…be made as small as 0.1 nm, EBID is very well suited for sub-10 nm patterning. This has been demonstrated with deposits having widths of 8 nm [1,2], 5 nm [3], 4 nm [4], 3.5 nm [5], 1.5 nm [6] and even 1.0 nm [7]. The patterning capabilities are demonstrated with a world map that includes topographical information (see figure 1).…”

Section: Introductionmentioning

confidence: 96%

Growth behavior near the ultimate resolution of nanometer-scale focused electron beam-induced deposition

et al. 2008

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An attempt has been made to reach the ultimate spatial resolution for electron beam-induced deposition (EBID) using W(CO) 6 as a precursor. The smallest dots that have been written have an average diameter of 0.72 nm at full width at half maximum (FWHM). A study of the nucleation stage revealed that the growth is different for each dot, despite identical growth conditions. The center of mass of each dot is not exactly on the position irradiated by the e-beam but on a random spot close to the irradiated spot. Also, the growth rate is not constant during deposition and the final deposited volume varies from dot to dot. The annular dark field signal was recorded during growth in the hope to find discrete steps in the signal which would be evidence of the one-by-one deposition of single molecules. Discrete steps were not observed, but by combining atomic force microscope measurements and a statistical analysis of the deposited volumes, it was possible to estimate the average volume of the units of which the deposits consist. It is concluded that the volume per unit is as small as 0.4 nm 3 , less than twice the volume of a single W(CO) 6 molecule in the solid phase.

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“…• C, Cu from Cu-DMBhfac [22], Fe from Fe(CO) 5 in a UHV set-up [46], Ga from D 2 GaN 3 [25], Ge from Ge 2 H 6 [26], Ir from [IrCl(PF 3 ) 2 ] 2 [27], Mn from MnMeCp(CO) 3 [28], Mo from Mo(CO) 6 [29], Ni from Ni(PF 3 ) 4 [30], Os from Os 3 (CO) 12 [31], Pb from Pb(CH 3 ) 4 , Pd from Pd(ac) with annealing to 250…”

Section: Introductionmentioning

confidence: 99%

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

Mulders²,

2009

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The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast 'point-and-shoot' creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One significant drawback to date has been the low purity level of the deposition. This has two independent causes: (1) partial or incomplete decomposition of the precursor molecule and (2) contamination from the residual chamber gas. This frequently limits the functionality of the structure, hence it is desirable to improve the decomposition and prevent the inclusion of contaminants. In this contribution we review and compare for the first time all the techniques specifically aimed at purifying the as-deposited impure EBID structures. Despite incomplete and scattered data, we observe some general trends: application of heat (during or after deposition) is usually beneficial to some extent; working in a favorable residual gas (ultra-high vacuum set-ups or plasma cleaning the chamber) is highly recommended; gas mixing approaches are extremely variable and not always reproducible between research groups; and carbon-free precursors are promising but tend to result in oxygen being the contaminant species rather than carbon. Finally we highlight a few novel approaches.

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Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3

Cited by 69 publications

References 17 publications

Spatial resolution limits in electron-beam-induced deposition

Spatial resolution limits in electron-beam-induced deposition

Growth behavior near the ultimate resolution of nanometer-scale focused electron beam-induced deposition

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

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