Synthesis of vertically‐aligned GaAs nanowires on GaAs/(111)Si hetero‐substrates by metalorganic vapour phase epitaxy

Miccoli, Ilio; Prete, P.; Marzo, Fabio; Cannoletta, Donato; Lovergine, N.

doi:10.1002/crat.201000711

Cited by 21 publications

(15 citation statements)

References 19 publications

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“…22. Trimethylgallium (Me 3 Ga), trimethylaluminum (Me 3 Al) and tertiarybutylarsine Ĳ t BuAsH 2 ) were used as gallium, aluminium and arsenic precursors, respectively.…”

Section: Methodsmentioning

confidence: 99%

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Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy

2015

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Group III-V compound semiconductor nanowires with radial modulation of the materials composition and/ or doping in the form of core-shell and core-multishell nanowire heterostructures show promise as novel and high-performance nano-scale light emitting diodes, lasers, photodetectors and solar cells. Strict control over the growth of such radially heterostructured nanowires is, however, necessary. We report the experimental dependence of AlGaAs shell growth by metalorganic vapor phase epitaxy (MOVPE) around free-standing Au-catalysed GaAs nanowires on the relevant sizes and densities of the nanostructures. A model based on (i) the vapor mass transport of group III species, and (ii) perfect conformality between the nanowires and the substrate of AlGaAs deposition is proposed and validated, describing the observed MOVPE growth dynamics of the shell material around dense ensembles of GaAs nanowires. We predict the complex (non-linear) dependence of the shell growth rate on the initial GaAs nanowire diameters (i.e., initial Au catalyst nanoparticle size), heights, local densities on the substrate, and deposition time, which is in very good agreement with experimental data; in particular, a monotonic decrease of AlGaAs shell thickness is expected and observed with increasing nanowire density.5998 | CrystEngComm, 2015, 17, 5998-6005This journal is

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“…22. Trimethylgallium (Me 3 Ga), trimethylaluminum (Me 3 Al) and tertiarybutylarsine Ĳ t BuAsH 2 ) were used as gallium, aluminium and arsenic precursors, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…The heterostructured GaAs/Ĳ111)Si substrates were synthesized by deposition at 400 °C and subsequent annealing at 730 °C of a relatively thin (40 ÷ 50 nm) and smooth GaAs epilayer on either exactly (111)-oriented or 4°miscut (towards a 〈112〉 direction) Si wafers following the procedures reported in ref. 22.…”

Section: Methodsmentioning

confidence: 99%

Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy

2015

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“…In addition, (111)-orientation is preferred for novel III-V nanowire (NW)-based devices [3]. Pseudomorphic III-V transition epilayers can, in general, facilitate the NW nucleation and are particularly important for vapor liquid solid growth [12][13][14][15]; for a recent review see Ref. [16].…”

Section: Introductionmentioning

confidence: 99%

“…[16]. Such planar buffer layers were implemented successfully for various III-V nanowire based structures such as GaAs [12,17], InP [18], InAs [19] and GaN [20,21]. In particular, GaP/Si(111) is a promising hetero-substrate for the integration of polar III-V nanowires on unpolar Si substrates due to the small lattice mismatch between silicon (a=5.43 Å) and gallium phosphide (a=5.45 Å) [22,23].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)

Winterfeld

Koppka

Abou‐Ras

et al. 2018

Phys. Rev. Materials

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Rotational twins are fundamental defects in III-V epitaxy, in particular for the growth on nonpolar (111) surfaces. Based on density functional theory (DFT) calculations, we develop a general model for III-V nucleation on vicinal non-polar (111)-oriented substrates and focus on the important differences in the atomic step configuration of different miscut directions. We verify this model by a relevant materials system when growing GaP epilayers on As-terminated Si(111): Scanning tunneling microscopy measurements reveal the formation of straight double bilayer steps after Aspassivation of the Si(111) surface, which persist after III-V growth, as we display when measuring the buried heterointerface with cross-sectional high-resolution transmission electron microscopy. A twin amount in the GaP epilayers is observed in dependence on the misorientation and our nucleation model explains the underlying mechanisms: The number of back-bonds at the step edges determines the nucleation site. Accordingly, the substrate misorientation towards [112] yields twin-suppression, which is in full agreement with experiment. Finally, we use DFT input for Kinetic Monte Carlo calculations to explain the formation of GaP rotational twins on Si(111):As in order to explain their volume fraction observed by high resolution X-ray diffraction measurements. We thus derive a complete picture of the formation and suppression of rotational twins relevant for low-defect III-V-on-Si integration.

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“…In addition, the condition of the growth reactor plays a crucial role. , To overcome these difficulties, a III–V transition layer can be grown on Si prior to NW growth (often referred to as III–V-on-Si virtual substrate or quasisubstrate). This approach was implemented successfully for various III–V NWs such as GaAs, , InP, InAs, and GaN , NWs. In these studies, (111)-oriented substrates were used, as NWs preferably grow in the [111] direction, and well-defined NWs oriented vertical to the substrate surface are advantageous for most device architectures.…”

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confidence: 99%

Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth

et al. 2017

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Pseudomorphic planar III-V transition layers greatly facilitate the epitaxial integration of vapor-liquid-solid grown III-V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth, however, is commonly accompanied by the formation of rotational twins. We find that rotational twin boundaries (RTBs), which intersect the surface of GaP/Si(111) heterosubstrates, generally cause horizontal NW growth and may even suppress NW growth entirely. Away from RTBs, the NW growth direction switches from horizontal to vertical in the case of homoepitaxial GaP NWs, whereas heteroepitaxial GaAs NWs continue growing horizontally. To understand this rich phenomenology, we develop a model based on classical nucleation theory. Independent of the occurrence of RTBs and specific transition layers, our model can generally explain the prevalent observation of horizontal III-V NW growth in lattice mismatched systems and the high crystal quality of horizontal nanowires.

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Synthesis of vertically‐aligned GaAs nanowires on GaAs/(111)Si hetero‐substrates by metalorganic vapour phase epitaxy

Cited by 21 publications

References 19 publications

Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy

Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy

Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111)

Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth

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