Synthesis of WO3 nanostructures and their ultraviolet photoresponse properties

Huo, Nengjie; Yang, Shengxue; Wei, Zhongming; Li, Jingbo

doi:10.1039/c3tc30527a

Cited by 70 publications

(48 citation statements)

References 50 publications

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“…Ottaviano et al [26] reported that the crystallite size of 5-nm-thick WO 3 changes from 26 to 35 nm due to annealing from 350 to 500 °C. The polycrystalline WO 3 layer had a d-spacing value of 3.8 Å, which was similar to the reported value of 3.835 Å for the (002) WO 3 layer [27]. The measured value of d-spacing of WO x was 4.7 Å, which was the same to the reported value of WO x (4.7 Å, [28]).…”

Section: Resultssupporting

confidence: 85%

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

et al. 2016

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Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO3/WOx/W structure have been investigated for the first time. Transmission electron microscope image shows a polycrystalline WO3/WOx layer in a device with a size of 150 × 150 nm2. The composition of WO3/WOx is confirmed by X-ray photo-electron spectroscopy. Non-linear bipolar resistive switching characteristics have been simulated using space-charge limited current (SCLC) conduction at low voltage, F-N tunneling at higher voltage regions, and hopping conduction during reset, which is well fitted with experimental current-voltage characteristics. The barrier height at the WOx/W interface for the devices annealed at 500 °C is lower than those of the as-deposited and annealed at 400 °C (0.63 vs. 1.03 eV). An oxygen-vacant conducting filament with a diameter of ~34 nm is formed/ruptured into the WO3/WOx bilayer owing to oxygen ion migration under external bias as well as barrier height changes for high-resistance to low-resistance states. In addition, the switching mechanism including the easy method has been explored through the current-voltage simulation. The devices annealed at 500 °C have a lower operation voltage, lower barrier height, and higher non-linearity factor, which are beneficial for selector-less crossbar memory arrays.

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Section: Resultssupporting

confidence: 85%

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

et al. 2016

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“…Formation of WO 3 nanowires involves the SO 4 2ion acting 95 as capping agent which selectively adsorb on parallel c-axis of crystallographic facets of WO 3 nanocrystal and slow down the growth rate along that direction resulting in progressive formation of c-axis oriented nanowires. 38 Selected area electron diffraction (SAED) pattern shows (Fig. 3d) that nanowires is a single hexagonal crystal that grows along the (002) direction, which is in good agreement with the results of XRD data.…”

Section: Resultssupporting

confidence: 84%

High performing smart electrochromic device based on honeycomb nanostructured h-WO₃ thin films: hydrothermal assisted synthesis

et al. 2015

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Herein, we report honeycomb nanostructured single crystalline hexagonal WO(3) (h-WO(3)) thin films in order to improve electrochromic performance. In the present investigation, honeycomb nanostructured WO(3) with different unit size and nanowire array with highly nanocrystalline frameworks have been synthesized via a hydrothermal technique. The influence of hydrothermal reaction time on the honeycomb unit cells, crystallite size, lithium ion diffusion coefficient and switching time for coloration/bleaching were studied systematically. The electrochromic study reveals that the honeycomb unit cell size has a significant impact on the electrochromic performance. Small unit cells in the honeycomb lead to large optical modulation and fast switching response. A large optical modulation in the visible spectral region (60.74% at λ = 630 nm) at a potential of -1.2 V with fast switching time (4.29 s for coloration and 3.38 s for bleaching) and high coloration efficiency (87.23 cm(2) C(-1)) is observed in the honeycomb WO(3) thin films with a unit cell diameter of 1.7 μm. The variation in color on reduction of WO(3) with applied potential has been plotted on an xy-chromaticity diagram and the color space coordinate shows the transition from a colorless to deep blue state.

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“…Another weak peak located at 38.2 eV can be attributed to a W valence higher than þ4 according to previous reports. 26 The spectrum of S consist of S2p 3/2 at 162.2 eV and S2p 1/2 at 163.4 eV (Fig. 2(d)).…”

Section: Edge-states Ferromagnetism Of Ws 2 Nanosheetsmentioning

confidence: 96%

Edge-states ferromagnetism of WS2 nanosheets

Huo

Kang

et al. 2014

Applied Physics Letters

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Synthesis of WO3 nanostructures and their ultraviolet photoresponse properties

Cited by 70 publications

References 50 publications

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

High performing smart electrochromic device based on honeycomb nanostructured h-WO₃ thin films: hydrothermal assisted synthesis

Edge-states ferromagnetism of WS2 nanosheets

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Synthesis of WO3 nanostructures and their ultraviolet photoresponse properties

Cited by 70 publications

References 50 publications

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

High performing smart electrochromic device based on honeycomb nanostructured h-WO3 thin films: hydrothermal assisted synthesis

Edge-states ferromagnetism of WS2 nanosheets

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High performing smart electrochromic device based on honeycomb nanostructured h-WO₃ thin films: hydrothermal assisted synthesis