Synthesis of wurtzite-phase ZnS nanocrystal and its optical properties

Tiwary, Chandra Sekhar; Kumbhakar, Pathik; Mitra, A. K.; Chattopadhyay, K.

doi:10.1016/j.jlumin.2009.07.004

Cited by 53 publications

(32 citation statements)

References 29 publications

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“…The characteristic XRD patterns of Zn 1−x Cd x S QDs exhibit three prominent peaks which correspond to (111), (220), and (311) planes of the cubic phase of ZnS with the lattice constant a = 5.4 Å (JCPDS card no. 80-0020) [9]. The diffraction peak positions also gradually shifted towards lower diffraction angles as the Cd concentration increased from 0 to 0.5, which indicates that the crystals obtained are not a mixture of pure ZnS and CdS rather a Zn 1−x Cd x S solid solution [8,10].…”

Section: Methodsmentioning

confidence: 88%

Defect-related blue emission from ultra-fine Zn1−xCd x S quantum dots synthesized by simple beaker chemistry

Mohapatra

2013

Int Nano Lett

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It has been possible to incorporate cadmium ions in ZnS quantum dots (QDs). It is studied how the substitution of Cd 2+ ions by zinc ions affects the structural, morphological, and optical properties of ZnS QDs. Zn 1−x Cd x S QDs are prepared by a simple beaker chemistry approach and characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy, and UV-visible and photoluminescence (PL) spectroscopies. XRD studies confirmed that all the prepared samples are in zinc-blende phase. With the increase of cadmium content, the diffraction peaks shifted towards lower diffraction angles and the lattice constant increased linearly. Optical studies revealed that the strong absorption edge also shifted towards the higher wavelength region with the increase of Cd content. Hence, the optical bandgap of the QDs decreases with the increase of Cd content. Due to the quantum confinement of the carriers in the QDs, the bandgap energy is higher than that of the corresponding bulk material. The PL spectrum of the undoped ZnS QDs contains five peaks (centered at 365, 400, 420, 450, and 470 nm) which are attributed to the recombination of the defect states of ZnS.

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Section: Methodsmentioning

confidence: 88%

Defect-related blue emission from ultra-fine Zn1−xCd x S quantum dots synthesized by simple beaker chemistry

Mohapatra

2013

Int Nano Lett

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“…10,11 The advantage of QCE is to modify electronic structure of nanostructures when size of particles becomes approximate to Bohr radius of those materials. 12 ZnS is II-VI semiconducting compound that has great significance because of its large band gap and direct recombination. It has great potential for optoelectronic devices for instance solar cells, blue light diodes and antireflection coating for infrared windows.…”

Section: Introductionmentioning

confidence: 99%

Richardson-Schottky transport mechanism in ZnS nanoparticles

et al. 2016

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We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ranging from 300 K to 400 K. High frequency dielectric constant has been used to obtain the theoretical values of Richardson-Schottky and Poole-Frenkel barrier lowering coefficients. Experimental value of the barrier lowering coefficient has been calculated from conductance-voltage characteristics. The experimental value of barrier lowering coefficient βexp lies close to the theoretical value of Richardson-Schottky barrier lowering coefficient βth,RS showing Richardson-Schottky emission has been responsible for conduction in ZnS nanoparticles for the temperature range studied.

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“…PL properties of ZnS nanowires are rather complicated. Various emission bands such as ultraviolet, blue, green, orange and red emission bands, and numerous emission centers had been reported in the previous literatures [28,34,[36][37][38][39][40]. It is known from these literatures that emission around 450 nm often are encountered in 1D ZnS nanostructures including nanowires and nanoribbon, and maybe originates from defects e.g., sulfur vacancies and/or bulk defects.…”

Section: Resultsmentioning

confidence: 99%

Growth and photoluminescence of zinc blende ZnS nanowires via metalorganic chemical vapor deposition

Lei

et al. 2011

Journal of Alloys and Compounds

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Synthesis of wurtzite-phase ZnS nanocrystal and its optical properties

Cited by 53 publications

References 29 publications

Defect-related blue emission from ultra-fine Zn1−xCd x S quantum dots synthesized by simple beaker chemistry

Defect-related blue emission from ultra-fine Zn1−xCd x S quantum dots synthesized by simple beaker chemistry

Richardson-Schottky transport mechanism in ZnS nanoparticles

Growth and photoluminescence of zinc blende ZnS nanowires via metalorganic chemical vapor deposition

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