Synthetic semiconductor diamond electrodes: kinetics of some redox reactions

Модестов, А. Д.; Evstefeeva, Yu. E.; Pleskov, Yu. V.; Mazin, V. M.; Varnin, V. P.; Teremetskaya, I. G.

doi:10.1016/s0022-0728(97)00140-x

Cited by 52 publications

(29 citation statements)

References 11 publications

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“…In preparing the working solutions, we used ultrahigh purity H 2 SO 4 and analytical grade K 3 Fe ( CN ) 6 and K 4 Fe ( CN ) 6 chemicals.…”

Section: Characterizationmentioning

confidence: 99%

“…The electrochemical behavior of boron-doped diamond (BDD) thin films grown on various kinds of substrate such as synthetic diamond, p -Si, W, Mo, graphite, etc., have been extensively studied [3][4][5][6][7][8][9]. The BDD electrodes offer an unusually wide potential window in aqueous electrolyte solutions and low voltammetric background current.…”

Section: Introductionmentioning

confidence: 99%

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Electrodes of synthetic diamond: The effects of Ti substrate pretreatment on the electrode properties

et al. 2005

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The electrode properties of boron-doped diamond thin films grown on Ti substrates by a hot-filament chemical vapor deposition technique are evaluated. The Ti substrate surface modifying conditions are devised, involving the surface roughening, annealing, and etching, which effectively improve the diamond electrode properties. The preetching of the Ti substrate produces the titanium hydride layer that can affect the borondoped diamond film growth significantly. The substrate roughened surface obviously improved the diamond film adhesion and reduced the inner stress. The electrodes reveal minimal background current and better stability. A wider potential window, up to ~3 V, is observed for the boron-doped diamond on the etched/annealed samples. The electrochemical activity of the electrodes in the Fe ( CN redox system somewhat increases with increasing surface roughness. The apparent increase in the reversibility of the reaction may be explained by the decrease in the true current density. Suitability of the Ti-based boron-doped diamond electrodes for electroanalytical applications is exemplified by sensing the trace metal ions, such as Hg 2+ and Pb 2+ .

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“…In preparing the working solutions, we used ultrahigh purity H 2 SO 4 and analytical grade K 3 Fe ( CN ) 6 and K 4 Fe ( CN ) 6 chemicals.…”

Section: Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrodes of synthetic diamond: The effects of Ti substrate pretreatment on the electrode properties

et al. 2005

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“…Diamond electrodes grown on different substrates have a particular remarkable for electrochemical study by offering high sensitivity, good precision and high stability when compared with glassy carbon and platinum electrodes [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

et al. 2005

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“…In addition, the large number of defects and grain boundaries likely contribute surface electronic states that are important electrochemically. The electrochemical and photoelectrochemical responses of polycrystalline diamond appear to be in¯uenced in a complex manner by i) the dopant type and concentration [14,15], ii) morphological features such as extended and point defects, iii) the primary crystallographic orientation, iv) the surface termination (H, F, O, etc.) [16,17], v) the fraction of the surface that is grain boundary carbon, and vi) the presence of nondiamond carbon impurity phases [11,18].…”

Section: Introductionmentioning

confidence: 99%

The Electrochemical Properties of Nanocrystalline Diamond Thin‐Films Deposited from C ₆₀ /Argon and Methane/Nitrogen Gas Mixtures

et al. 2000

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Nanocrystalline diamond thin-®lms have been synthesized in CH 4 /Ar (argon) and CH 4 /N 2 gas mixtures without the addition of molecular hydrogen. Atomic force microscopy analysis demonstrates that the C 60 /Ar ®lms consist of hemispherical features about 150 nm in diameter with a height of 20 nm. The mean roughness over a 262 mm 2 area, based on feature height analysis, is 50 + 8 nm. The voltammetric response of these ®lms in the presence of FeCN , methyl viologen and 4-tert-butylcatechol is similar to that expected for high quality microcrystalline diamond. The results indicate that the nanocrystalline ®lms are active without any conventional pretreatment, and possess semimetallic electronic properties over a potential range from 0.5 to À1.5 V (vs. SCE). Nanocrystalline diamond thin-®lms produced from CH 4 /N 2 mixtures are rougher than the C 60 /Ar ®lms, and possess electrochemical properties more closely resembling glassy carbon. The charge carrier concentration in both types of ®lms is believed to result mainly from the sp 2 carbon in the grain boundaries.

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Synthetic semiconductor diamond electrodes: kinetics of some redox reactions

Cited by 52 publications

References 11 publications

Electrodes of synthetic diamond: The effects of Ti substrate pretreatment on the electrode properties

Electrodes of synthetic diamond: The effects of Ti substrate pretreatment on the electrode properties

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

The Electrochemical Properties of Nanocrystalline Diamond Thin‐Films Deposited from C ₆₀ /Argon and Methane/Nitrogen Gas Mixtures

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Synthetic semiconductor diamond electrodes: kinetics of some redox reactions

Cited by 52 publications

References 11 publications

Electrodes of synthetic diamond: The effects of Ti substrate pretreatment on the electrode properties

Electrodes of synthetic diamond: The effects of Ti substrate pretreatment on the electrode properties

Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

The Electrochemical Properties of Nanocrystalline Diamond Thin‐Films Deposited from C 60 /Argon and Methane/Nitrogen Gas Mixtures

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Product

Resources

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The Electrochemical Properties of Nanocrystalline Diamond Thin‐Films Deposited from C ₆₀ /Argon and Methane/Nitrogen Gas Mixtures