2007
DOI: 10.1143/jpsj.76.094703
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System-Size Dependence of Quantum Hall Transitions

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Cited by 22 publications
(61 citation statements)
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“…Below T coh , R H decreases rapidly as the temperature is lowered. Further decrease of temperature increases R H after showing a minimum at around 5 K. The magnitude of R H above T coh matches well with that of bulk single crystal [15]. The enhancement of the absolute value of R H below T coh is nearly 15 times that at above T coh , which is nearly half of that in bulk single crystal.…”
supporting
confidence: 74%
See 1 more Smart Citation
“…Below T coh , R H decreases rapidly as the temperature is lowered. Further decrease of temperature increases R H after showing a minimum at around 5 K. The magnitude of R H above T coh matches well with that of bulk single crystal [15]. The enhancement of the absolute value of R H below T coh is nearly 15 times that at above T coh , which is nearly half of that in bulk single crystal.…”
supporting
confidence: 74%
“…The first is the reduction of AF fluctuations and the second is the increase of isotropic impurity scattering by nonmagnetic Yb-ions. In the former case, since the system is tuned away from the quantum critical point, the Tlinear resistivity is expected to change to T 2 -dependence accompanied by a reduction of ρ 0 [15]. However, such a trend is not observed here.…”
mentioning
confidence: 68%
“…Below T ≈ 50 K, R H becomes field dependent and its magnitude is significantly enhanced. Very similar behavior of R H (T, B) in CeCoIn 5 and CeRhIn 5 was attributed to antiferromagnetic spin fluctuations causing highly anisotropic scattering time [20]. For the highest applied magnetic field (B = 12.5 T), R H changes sign for positive for 30 T 50 K. This can be a result of skew-scattering or/and multiband compensation.…”
mentioning
confidence: 73%
“…21-23 Moreover, in all the theoretical studies on the I-QH transition, the carrier density is assumed to be constant, independent of both temperature and magnetic field. 27-29 Therefore the reservoir model describing charge transfer between epitaxial graphene and the SiC substrate as a function of B (Ref. 16) should not play an important role in the observed low-field I-QH transition in the work of Pallecchi et al.…”
Section: Resultsmentioning
confidence: 99%
“…16 Moreover, in EG grown on SiC, 17, 18 E F can be pinned to the localized states 19 such that the ν = 2 QH plateau extends from a low field (∼ 1 T) to exceptionally high values (30 T), 20 making EG an ideal system for studying an isolated low-field QH transition, although no such high-field transition has been reported. A possible reason for this is the reservoir model responsible for the long ν = 2 QH plateau 19 so that one does not observe the high-field insulating state.…”
Section: Methodsmentioning
confidence: 99%