Systematic study of the process parameters affecting hydrogen plasma passivation of polycrystalline silicon and polycrystalline silicon solar cells

Arole, V.M.; Dusane, Rajiv O.; Takwale, M.G.; Marathe, B. R.; Bhide, V. G.

doi:10.1016/0165-1633(88)90021-4

Solar Energy Materials

1988

DOI: 10.1016/0165-1633(88)90021-4

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Systematic study of the process parameters affecting hydrogen plasma passivation of polycrystalline silicon and polycrystalline silicon solar cells

V.M. Arole¹,

Rajiv O. Dusane²,

M.G. Takwale³

et al.

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Cited by 5 publications

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“…The rate of increase, however, is in the range expected according to previous reports on polycrystalline Si. [22] Our result demonstrates that HPP increases the conductivity of i-cSi-o to a much greater extent than it does for the c-Si thin film. It is interesting to note that, for the case at hand, the electrical conductivity of i-cSi-o is slightly greater than of the c-Si thin film after HPP.…”

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“…In this study, i-cSi-o were formed from i-aSi-o using the solid-phase crystallization (SPC) technique, [21] and were subsequently treated with hydrogen-plasma passivation (HPP) in order to reduce the density of Si dangling bonds that otherwise serve as electronic trap states. [22] To investigate the dependence of s d on the photonic-crystal lattice constant of i-Si-o, silica opals with different sphere diameters were used as templates. The deposition conditions, such as concentration of spheres in ethanol and rate of evaporationinduced self-assembly on sapphire substrates were optimized in order to achieve well-ordered opal films.…”

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Tailoring the Electrical Properties of Inverse Silicon Opals ‐ A Step Towards Optically Amplified Silicon Solar Cells

et al. 2009

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It has been just over two decades since John and Yablonovitch theoretically predicted the existence of a complete photonic band gap in 3D silicon photonic crystals, a range of wavelengths for which light is forbidden to propagate in all three spatial dimensions.[1] This breakthrough inspired global research activity to transform the idea into practice, at the time driven mainly by the field of optical telecommunications.[2] Since then, several studies have demonstrated the potential advantages of photonic crystals for other applications, such as light emitting diodes, [3] lasers, [4,5] wave guides, [6,7] photocatalysts, [8] displays, [9,10] and solar cells. [11][12][13] In particular, the inverse silicon opal (i-Si-o) with a high refractive-index contrast has attracted attention because of its demonstrated complete photonic band gap at 1.5 mm and the possibility of large-scale synthesis.[14] While the optical properties of i-Si-o have been thoroughly investigated, [15,16] little research has been focused on its electrical behaviour, knowledge that would underpin the development of any kind of electro-optical device based on i-Si-o. It can be envisioned that the electrical properties of i-Si-o with its 3D open-framework microstructure could be very different from that of Si thin films, similar to the different behaviour observed for electrochemically etched porous silicon.[17] It is therefore our opinion that the electrical properties of i-Si-o need to be elucidated, as this data will be critical for applications such as optically amplified silicon solar cells. [18] The purpose of the work described herein is to understand the electrical properties of i-Si-o, focusing in particular on the influence of the photonic-crystal lattice constant and the effect of crystallinity and hydrogen-plasma passivation of Si on the electrical conductivity of i-Si-o, and how these material properties correlate with the optical properties of i-Si-o.To reach our objectives, we fabricated i-Si-o by infiltrating the voids of a silica-opal template with Si using chemical vapor deposition (CVD), and subsequently etching the silica spheres with hydrofluoric acid (HF).[19] Accurate measurements of the dc electrical dark conductivities (s d ) require electrodes and electrical contacts on the i-Si-o films. Therefore, instead of using glass substrates, which are most commonly employed, we prepared all samples on sapphire substrates due to their high stability against HF etching. Note that the i-Si-o fabricated on glass substrates usually gets detached and becomes free-standing after HF etching, while high-quality intact i-Si-o films can be achieved on sapphire substrates.The as-deposited Si obtained by CVD in the interstitial voids of silica opals is amorphous. We denote them inverse amorphoussilicon opals (i-aSi-os). In order to integrate i-aSi-o in optical, electro-optical, or electrical devices, it is important to achieve inverse crystalline-silicon opals (i-cSi-o), because crystalline silicon has a much higher conductivity than amorphous s...

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Tailoring the Electrical Properties of Inverse Silicon Opals ‐ A Step Towards Optically Amplified Silicon Solar Cells

et al. 2009

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Effect of hydrogen passivation on electrical transport in polycrystalline silicon

Arole

Takwale

Bhide

1990

Solar Energy Materials

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Combined effect of aluminium diffusion and annealing on GB properties in cast polysilicon

Suresh

Satyam

1993

Solar Energy Materials and Solar Cells

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Systematic study of the process parameters affecting hydrogen plasma passivation of polycrystalline silicon and polycrystalline silicon solar cells

Cited by 5 publications

References 19 publications

Tailoring the Electrical Properties of Inverse Silicon Opals ‐ A Step Towards Optically Amplified Silicon Solar Cells

Tailoring the Electrical Properties of Inverse Silicon Opals ‐ A Step Towards Optically Amplified Silicon Solar Cells

Effect of hydrogen passivation on electrical transport in polycrystalline silicon

Combined effect of aluminium diffusion and annealing on GB properties in cast polysilicon

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