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Hydrogen passivation of polycrystalline silicon wafer is carried out in order to reduce the deleterious effects of grain boundaries. A systematic variation is made in the process parameters implemented during hydrogen passivation and the results of room temperature resistivity measurements are reported. As an efficient tool to study the structure change, positron lifetime spectroscopic measurements are performed on original and hydrogenated polycrystalline silicon wafers and a systematic correlation is sought between the changes that take place in the electrical and structural properties of polycrystalline silicon water, brought about by hydrogen passivation.

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CW CO2 laser annealing of boron-doped polycrystalline silicon at various substrate temperature, from room temperature to 600 degrees C, is reported. The overall improvement in charge carrier conduction of polycrystalline silicon is shown to occur at a substrate temperature of 200 degrees C, where the maximum improvement is observed in the charge carrier mobility. These changes in the electrical properties of polycrystalline silicon are correlated with the structural modifications occurring due to laser annealing, as observed by scanning electron microscopy and X-ray diffraction. The simultaneous changes in the electrical and structural properties of polycrystalline silicon are thus carefully studied and reported.