Systematic study on size and temporal dependence of micro-LED arrays for display applications

Abstract

Micro-LEDs are one of the most promising candidates for next-generation displays, yet they are inconvenienced by the efficiency reduction induced by the sidewall defects when pursuing further scaled-down device dimensions. We have systematically investigated both the size and temporal dependence of micro-LEDs. Micro-LED arrays with a mesa size ranging from 7 to 100 μm were prepared for display purposes. The luminance and external quantum efficiency (EQE) were measured and discussed. Surprisingly, micro-LED arrays with a smaller mesa size exhibit a higher EQE under 100 ns pulse duration operation when compared with longer pulse duration operations. Under certain short-pulsed excitation, a 7×7 μm2 micro-LED array even exhibits a >20% higher EQE as compared to the direct current (DC) or the long duration pulse operation condition. We thus concluded that the notorious efficiency reduction induced by sidewall defects in small-sized micro-LED arrays could be significantly reduced by applying short-pulse voltages.

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

“…To date, there has been extensive research and development on size-dependent effects of micro-LED arrays for display applications. J. Nie et al reported that the notorious efficiency reduction induced by sidewall defects in small micro-LED arrays could be significantly reduced by applying short-pulse voltages [30]. Z. Wang et al reported guidance for the analysis and repair of sidewall defects to improve the quantum efficiency of micro-LEDs' display [31].…”