Systematics of Electrical Conductivity across InP to GaAs Wafer-Fused Interfaces

Abstract

We report on the electrical and compositional characterization of wafer-fused isotype heterojunctions between Zn-, C- or Si-doped GaAs and Zn- or Si-doped InP. The junctions were characterized by current-voltage and secondary ion mass spectrometry (SIMS) measurements. It is demonstrated that very low-resistive junctions can be obtained in each case, but also that there is a strong influence from the detailed sample structure and processing conditions. SIMS was used to monitor the doping concentration across the interface as well as the impurity concentrations of oxygen, carbon and iron.

III-V/Si hybrid photonic devices by direct fusion bonding

“…p -Si/ p -Si and n -Si/ n -Si, can be relatively easily obtained by direct wafer bonding even at room temperature 26 27 . It is, however, not the case for compound semiconductors such as GaAs and InP, and ohmic p -type/ p -type or n -type/ n -type junction formation has required high temperature bonding above 600°C 28 29 30 31 32 33 which would severely degrade the device materials. For GaAs/Si bonding that would be particularly attractive for fabrication of high performance photonic and photovoltaic devices, no successfully direct-bonded ohmic junctions have been reported, and bonding even at 700°C was reported to have failed 27 34 .…”