T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and &lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;$f_{\rm MAX}$ &lt;/tex-math&gt;&lt;/inline-formula&gt;

Murase, Yasuhiro; Asano, Kōichi; Takenaka, I.; Ando, Yasuhisa; Takahashi, H.; Sasaoka, Chiaki

doi:10.1109/led.2014.2308313

Cited by 34 publications

(12 citation statements)

References 6 publications

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“…It can be noticed that an extremely low leakage current below 100 nA/mm is observed up to a high bias, yielding outstanding three-terminal breakdown voltages defined at 1 µA/mm of about 80 V and 160 V, respectively. This translates to a breakdown field ranging from 90 to 100 V/µm, which is favorably comparable to typical reported values in the literature for such short RF devices, especially in terms of leakage current level [13]. The benefit of this configuration, enabling us to prevent both short-channel effects and the electron injection into the buffer layers under high electric field, is absolutely obvious in the sub-threshold region and is consequently reflected in the three-terminal breakdown voltage of these devices.…”

Section: Rf Characteristicssupporting

confidence: 87%

Section: Characteristicssupporting

confidence: 87%

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High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

et al. 2016

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Abstract:We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipation.

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Section: Rf Characteristicssupporting

confidence: 87%

Section: Characteristicssupporting

confidence: 87%

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

et al. 2016

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“…Table 1 lists the value of each element in the smallsignal model. Compared to the references with a T-gate structure [6], [10]- [12], our R-gate device exhibits relatively low gate resistance (R g ). The RF performance is also comparable to the other T-gate GaN-on-Si devices.…”

Section: Introductionmentioning

confidence: 93%

“…However, the development of radio frequency (RF) GaN HEMTs on Si substrates still lags behind the GaN-on-SiC system. The best reported f T and f max for GaN HEMTs on Si substrates is 250 GHz and 226 GHz, respectively [5], [6].…”

Section: Introductionmentioning

confidence: 99%

High f_max × L_G Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

Chang

Hsu

et al. 2020

IEEE J. Electron Devices Soc.

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In this letter, we successfully demonstrated a AlGaN/GaN high-electron mobility transistor on silicon substrate with high product of maximum oscillation frequency (f max ) and gate length (L G ) by reducing the gate resistance (R g ) using a thick, high aspect ratio rectangular gate (R-gate) structure with an L G of 265 nm and thickness of 315 nm which was fabricated using a thick polymethyl methacrylate lift-off process. The maximum drain current is over 1 A/mm, and the peak transconductance is 291 mS/mm. The values of cutoff frequency and f max are 43.7 GHz and 126.5 GHz at a drain voltage (V d ) of 12 V, respectively. R g is extracted through the small-signal model, and the value is given as 0.21 -mm which is comparable to devices with the T-gate structure. This low R g results in a high f max and high f max × L G product of 33.52 GHz-µm, comparable to previously reported GaN-on-Si transistors for both R-gate and T-gate structures.INDEX TERMS AlGaN/GaN, high-electron mobility transistor (HEMT), silicon substrate, power-gain cutoff frequency (f max ), rectangular gate, f max × L G .

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“…The high f T × L g shows that the great potential of the InAlN GaN HEMT device technology to be applied in high speed applications on silicon platform when further downscaling the device feature size. 17,[31][32][33][34][35][36][37][38] /SiC, 20,[39][40][41][42][43][44][45] AlN on Si 11,46,47) /SiC, [48][49][50] and InAlN on Si [12][13][14]18,51,52) /SiC 3,6,9,22,[53][54][55][56][57][58] with L g ⩽ 200 nm).…”

mentioning

confidence: 99%

High-performance InAlN/GaN HEMTs on silicon substrate with high f _T × L _g

Cui

Mercante

Lin

et al. 2019

Appl. Phys. Express

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We report an 80 nm gate-length In0.17Al0.83N/GaN high-electron mobility transistor (HEMT) on silicon substrate with a record low gate leakage current of 7.12 × 10−7 A mm−1, a record high on/off current ratio of 1.58 × 106, and a steep subthreshold swing of 65 mV dec−1, which are excellent features among the reported InAlN/GaN HEMTs on Si. Due to the excellent DC performance, a current gain cutoff frequency fT of 200 GHz is achieved, resulting in fT × Lg = 16 GHz μm for GaN HEMTs on Si which to the best of our knowledge is a new record.

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T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <tex-math notation="TeX">$f_{\rm MAX}$ </tex-math></inline-formula>

Cited by 34 publications

References 6 publications

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

High f_max × L_G Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

High-performance InAlN/GaN HEMTs on silicon substrate with high f _T × L _g

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T-Shaped Gate GaN HFETs on Si With Improved Breakdown Voltage and <inline-formula> <tex-math notation="TeX">$f_{\rm MAX}$ </tex-math></inline-formula>

Cited by 34 publications

References 6 publications

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

High-performance InAlN/GaN HEMTs on silicon substrate with high f T × L g

Contact Info

Product

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High f_max × L_G Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

High-performance InAlN/GaN HEMTs on silicon substrate with high f _T × L _g