Tailored Glass Transition of ArF Resists for Resolution Enhancement at sub-50nm node

Takemoto, Ichiki; Fuji, Yusuke; Yoshida, Isao; Hashimoto, Kazuhiko; Miyagawa, Takayuki; Yamaguchi, S.; Takahashi, Kenji; Konishi, Shinji; Lee, Young Joon

doi:10.2494/photopolymer.18.399

Cited by 3 publications

(4 citation statements)

References 9 publications

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“…Thus, the enhanced sensitivity, among the t BOC-protected material, of IM-MFP 12–8 was attributed to the higher flexibility of longer polymer chains helping to improve cross-linking. Long chains have previously been reported to enhance acid diffusion, which is evident in this study …”

Section: Ebl Resist Familiessupporting

confidence: 71%

“…Long chains have previously been reported to enhance acid diffusion, which is evident in this study. 50 Figure 14 illustrates the SEM images of single pixel gratings exposed on IM-MFP 12−8 resist developed with 1:1 MBC:IPA. The line width observed for the gratings lies between 13 and 15 nm, exposed at 30 kV within a dose range of between 240 and 350 pC/cm 2 .…”

mentioning

confidence: 99%

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New Generation Electron Beam Resists: A Review

2017

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The semiconductor industry has already entered the sub-10 nm region, which has led to the development of cutting-edge fabrication tools. However, there are other factors that hinder the best outcome of these tools, such as the substrate and resist materials, pre-and postfabrication processes, etc. Among the lithography techniques, electron beam lithography (EBL) is the prime choice when a job requires dimensions lower than 10−20 nm, since it can easily achieve such critical dimensions in reasonable time and effort. When obtaining pattern features in single nanometer regime, the resist material properties play an important role in determining the size. With this agenda in mind, many resists have been developed over the years suitable for attaining required resolution in lesser EBL writing time. This review article addresses the recent advancements made in EBL resists technology. It first describes the different lithography processes briefly and then progresses on to the parameters affecting the EBL fabrications processes. EBL resists are then bifurcated into their "family types" depending on their chemical composition. Each family describes one or two examples of the new resists, and their chemical formulation, contrast-sensitivity values, and highest resolution are described. The review finally gives an account of various alternate next-generation lithography techniques, promising dimensions in the nanometer range.

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Section: Ebl Resist Familiessupporting

confidence: 71%

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confidence: 99%

New Generation Electron Beam Resists: A Review

2017

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“…Polymer 6a with the shortest linker exhibited the highest T g (138 °C). A similar dependence of T g on length of linker has been reported for poly(methacrylate)s bearing 2‐methyl‐2‐adamantyloxycarbonyl moiety in the side chain …”

Section: Resultssupporting

confidence: 78%

Synthesis and radical polymerization of methacrylate endowed with bicyclobis(γ‐butyrolactone) moiety through methylene linker

Yamasaki

Sudo

Endō

2015

J. Polym. Sci. Part A: Polym. Chem.

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A series of methacrylates bearing bicyclobis(γ‐butyrolactone) (BBL) moiety were synthesized and radically polymerized to afford the corresponding poly(methacrylate)s bearing BBL moiety in the side chain, with expecting that the high polarity and rigidity of BBL would be inherited by the polymers. The resulting polymers were soluble in polar aprotic solvents such as dimethyl sulfoxide and N,N‐dimethylformamide because of the high polarity of the BBL moiety. The glass transition temperatures (Tg) of the polymers depended on the length of methylene linker that tethered the methacrylate and BBL moieties, making the use of shorter linkers lead to higher Tgs. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2015, 53, 2462–2468

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“…42 Moreover, an increased chain length between the bulky side group and the main chain was also reported to improve the sensitivity of some other polymer based resists due to enhanced acid diffusion. 43 It has also been shown that for chemically amplied resists exposed via high energy techniques (such as electron beam lithography) the ability of the non-PAG components to be deprotonated can have a large effect on sensitivity. In order to evaluate the industrial viability of the resists, a variety of non-halogenated developers have been tested.…”

Section: Sensitivity and Contrast Evaluationmentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

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Tailored Glass Transition of ArF Resists for Resolution Enhancement at sub-50nm node

Cited by 3 publications

References 9 publications

New Generation Electron Beam Resists: A Review

New Generation Electron Beam Resists: A Review

Synthesis and radical polymerization of methacrylate endowed with bicyclobis(γ‐butyrolactone) moiety through methylene linker

Chemically amplified phenolic fullerene electron beam resist

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