We present a study of the structural and optical properties of InAs quantum dots formed in a low density template of nanoholes fabricated by droplet epitaxy on GaAs ͑001͒. The growth conditions used here promote the formation of isolated quantum dots only inside the templated nanoholes. Due to the good optical quality and low density of these nanostructures, their ensemble and individual emission properties could be investigated and related to the particular growth method employed and the quantum dot morphology. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2799736͔ New nanoelectronics and quantum information perspectives require the ability of growing nanostructures with control in size and spatial location. In particular, for the application of quantum devices based in single quantum dots 1,2 ͑QDs͒ as, for instance, single photon emitters, it is necessary to combine strategies that would permit precise location of a single nanostructure presenting at the same time high optical quality. [3][4][5][6] With this aim, a quite wide-spread strategy to overcome the randomly positioning of self-assembled nanostructures is based on the use of patterned substrates to create preferential nucleation sites that define the position and size of the nanostructures. In particular, highly ordered arrays of QDs have been already obtained using different lithographic approaches followed by an appropriate regrowth process. 5,7,8 In this situation, the droplet epitaxy has revealed itself as a potential technique to achieve templates for localization of nanostructures with high optical quality in latticemismatched heteroepitaxial systems. 9 This technique has been mainly developed in GaAs based systems and basically consists of the supply of a certain amount of Ga during growth to form metallic droplets on the surface, which are later transformed into crystalline GaAs under arsenic atmosphere. Under certain experimental conditions, the crystallization process leads to the formation of specific structures containing nanoholes that act as preferential sites for InAs QD nucleation upon further InAs deposition. 10 The density of nanoholes corresponds to that of the droplets, being possible to obtain QD densities as low as 10 7 cm −2 . 11 The size of these nanostructures is related to the amount of InAs filling the nanoholes, with independence of their density, as opposed to the QD formation by self-assembling processes. This fact is especially interesting for applications based on a single QD. Furthermore, in coincidence with other lithographic techniques, 12 a different number of QD per nanohole can also be obtained. 13 In this situation, one advantage of the droplet epitaxy technique is that it can provide nanotemplates for QD formation without the need of growing thick buffer layers to avoid the influence of residual contamination from the fabrication process on the optical properties of the nanostructures.This work deals with the structural and optical characterization of InAs QDs formed in a template of 2.4 ϫ 10 8 cm −2 nano...