Doped silicon quantum dots (SiQDs) with defined size,
dopant distribution,
and surface chemistry are highly sought after as a scientific curiosity
because their unique properties offer a wide array of potential applications
including multimodal medical imaging and photovoltaic devices. This
report describes a diffusion-based postsynthesis doping method for
incorporating high concentrations of B (2.5–5.0 at. %) into
preformed SiQDs of predefined sizes while simultaneously maintaining
their structure and morphology. The processing temperature, atmosphere,
and QD size all strongly influence the resulting B-doped SiQDs. The
as-synthesized doped SiQDs exhibit size-dependent photoluminescence
spanning the visible to near-infrared spectral regions, are compatible
with aqueous environments, and are readily rendered compatible with
organic solvents upon functionalization with appropriate alkoxide
surface groups. Being able to effectively tune the size and surface
chemistry of the present B-doped SiQDs make them excellent candidates
for use in targeted applications such as multimodal imaging and photovoltaic
devices.