Tailoring hole injection of sol–gel processed WO<sub>x</sub> and its doping in PEDOT:PSS for efficient ultraviolet organic light-emitting diodes

Yuan, Yongfang; Zhang, Xiaowen; Li, Dongliang; Wang, Lihui; Lu, Zongliu; Li, Liming; Chi, Feng

doi:10.1039/d0cp02006k

Cited by 7 publications

(3 citation statements)

References 37 publications

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“…For instance, the normal‐structured NUV OLEDs with PEDOT:PSS + WO x and PEDOT:PSS + WS 2 as HILs show maximum EQEs of 2.3% and 2.1% and maximum radiance of 3.98 and 4.7 mW cm −2 , respectively. [ 43,44 ] It significantly demonstrates the superiority of Li 2 CO 3 in electron injection tailoring and advancing UV OLED performance.…”

Section: Resultsmentioning

confidence: 97%

Facilely Solution‐Processed Lithium Carbonate for Tailoring Electron Injection in High‐Performance Inverted Near‐UV Organic Light‐Emitting Diodes

Yao

Wang

et al. 2021

Physica Status Solidi (a)

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Electron injection plays a key role in electron–photon conversion properties of inverted UV–visible organic light‐emitting diodes (OLEDs). Herein, facilely prepared solution‐processed lithium carbonate (Li2CO3) formic acid and boric acid solutions for tailoring electron injection in inverted near‐UV (NUV) OLEDs are studied. Superior film morphology and exceptional electronic properties of spin‐coated Li2CO3 films are examined by atomic force microscopy, X‐ray/ultraviolet photoelectron spectroscopy, current–voltage curves, and impedance spectroscopy. Efficient inverted NUV OLEDs are assembled using wide‐bandgap molecule of 2‐(4‐biphenyl)‐5‐(4‐tert‐butylphenyl)‐1,3,4‐oxadiazole as emissive layer, showing maximum radiance of 5.24 mW cm−2 (2.28 mW cm−2) and external quantum efficiency of 2.47% (2.17%) with an optimal Li2CO3 formic acid of 3 mg ml−1 (Li2CO3 boric acid of 7 mg ml−1) as electron injection tailoring. The NUV emission shows electroluminescence peaks of 404–406 nm and full width at half maximum of 52–56 nm. The results provide some feasible approaches for enhancing the performance of organic electronic devices, which require strong electron injection/extraction and accelerate industrialization.

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Section: Resultsmentioning

confidence: 97%

Facilely Solution‐Processed Lithium Carbonate for Tailoring Electron Injection in High‐Performance Inverted Near‐UV Organic Light‐Emitting Diodes

Yao

Wang

et al. 2021

Physica Status Solidi (a)

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“…It is, therefore, possible to tune the physicochemical properties, such as work function, bandgap, and electrical conductivity, to a large extent by controlling the cationic oxidation state and the film stoichiometry [2]. As a matter of fact, adjustments in the film stoichiometry and microstructure are experimentally viable by the choice of a suitable growth technique [9][10][11]. As a result, heterostructures having an n-type WO x layer on various p-type substrates such as p-Si [12,13], Cu 2 O [14], NiO [15], p-ZnO nanowires (NWs) [16], diamond [17], and BiVO 4 [18], have a great technological importance in the field of heterojunction solar cells, LEDs, and resistance random access memory (RRAM) devices.…”

Section: Introductionmentioning

confidence: 99%

Controllable physicochemical properties of WO_x thin films grown under glancing angle

Mandal,

Dutta

et al. 2024

Beilstein J. Nanotechnol.

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In this work, various physicochemical properties are investigated in nanostructured WOx thin films prepared by radio-frequency magnetron sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent property modulations of the as-deposited and annealed films. The analyses show a reasonably good correlation with photoelectron spectroscopic measurements on the films and the bulk I–V characteristics acquired on a series of WOx/p-Si heterojunction diodes. The presence of a critical WOx thickness is identified to regulate the rectification ratio values at the WOx/p-Si heterostructures and increase in series resistance within the bulk of the films. The present study provides valuable insights to correlate optical, electrical, and structural properties of WOx thin films, which will be beneficial for fabricating WOx-based optoelectronic devices, including photovoltaic cells.

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“…The X-ray diffraction (XRD) pattern in Figure 1b verifies the formation of WO x amorphous films, which is consistent with the previously reported results. 19,20 Due to its wide bandgap, the as-prepared WO x film exhibits ultraviolet absorption (recorded by an ultraviolet/visible spectrometer (UV 1750, Shimadzu) and photoluminescence (PL) emission (the excitation wavelength is 325 nm, recorded by a fluorescence spectrometer, QuantaMaster 8000) as shown in Figure 1c.…”

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confidence: 99%

Memory-Enabled Quantum-Dot Light-Emitting Diodes

Meng,

Bai,

Zhou

et al. 2024

J. Phys. Chem. Lett.

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Quantum-dot light-emitting diodes (QLEDs) with memory capability can provide multifunctional integration properties in on-chip and intelligent electronic applications. Herein, memory properties are achieved by inserting a tungsten oxide (WO x ) film between the ZnO electron-transporting layer and cathode. Pentavalent tungsten ions (W 5+ ) in this nonstoichiometric WO x film can be oxidized to W 6+ by storing holes, inducing significant electrons in the adjacent ZnO layer. Hole storage in the WO x layer suppresses electron injection into the quantum dot emissive layer, hence reducing electroluminescence intensity on the onset stage of the QLEDs. This operation-history correlation for the electroluminescence intensity means a memory behavior for the QLEDs. Furthermore, the power efficiency of the devices is greatly improved after inserting the WO x layer due to electrical field-dependent selfadaptive electron injection into the quantum dots (QDs). We anticipate this type of QLEDs have potential applications in on-chip integration applications, such as the optical computing field and storage.

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Tailoring hole injection of sol–gel processed WO_x and its doping in PEDOT:PSS for efficient ultraviolet organic light-emitting diodes

Abstract: We present an easily processed WOx solution and its doping in PEDOT:PSS for tailoring hole injection and assembling efficient ultraviolet OLEDs.

Cited by 7 publications

References 37 publications

Facilely Solution‐Processed Lithium Carbonate for Tailoring Electron Injection in High‐Performance Inverted Near‐UV Organic Light‐Emitting Diodes

Facilely Solution‐Processed Lithium Carbonate for Tailoring Electron Injection in High‐Performance Inverted Near‐UV Organic Light‐Emitting Diodes

Controllable physicochemical properties of WO_x thin films grown under glancing angle

Memory-Enabled Quantum-Dot Light-Emitting Diodes

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Tailoring hole injection of sol–gel processed WOx and its doping in PEDOT:PSS for efficient ultraviolet organic light-emitting diodes

Abstract: We present an easily processed WOx solution and its doping in PEDOT:PSS for tailoring hole injection and assembling efficient ultraviolet OLEDs.

Cited by 7 publications

References 37 publications

Facilely Solution‐Processed Lithium Carbonate for Tailoring Electron Injection in High‐Performance Inverted Near‐UV Organic Light‐Emitting Diodes

Facilely Solution‐Processed Lithium Carbonate for Tailoring Electron Injection in High‐Performance Inverted Near‐UV Organic Light‐Emitting Diodes

Controllable physicochemical properties of WOx thin films grown under glancing angle

Memory-Enabled Quantum-Dot Light-Emitting Diodes

Contact Info

Product

Resources

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Tailoring hole injection of sol–gel processed WO_x and its doping in PEDOT:PSS for efficient ultraviolet organic light-emitting diodes

Controllable physicochemical properties of WO_x thin films grown under glancing angle