2016
DOI: 10.1021/acsami.6b09761
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Tailoring Nucleation at Two Interfaces Enables Single Crystalline NiO Nanowires via Vapor–Liquid–Solid Route

Abstract: Here we show a rational strategy to fabricate single crystalline NiO nanowires via a vapor-liquid-solid (VLS) route, which essentially allows us to tailor the diameter and the spatial position. Our strategy is based on the suppression of the nucleation at vapor-solid (VS) interface, which promotes nucleation only at the liquid-solid (LS) interface. Manipulating both the supplied material fluxes (oxygen and metal) and the growth temperature enables enhancement of the nucleation only at the LS interface. Further… Show more

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Cited by 8 publications
(2 citation statements)
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“…The square shape of MgO at the initial stage can be ascribed to the sidewall growth due to its intrinsic crystal structure in rocksalt. 22,27 As the reaction continues, some of the vertically grown nanowires, after growing to a certain length, turn to the inclined 〈111〉 direction in growth (Fig. 7b).…”
Section: Resultsmentioning
confidence: 99%
“…The square shape of MgO at the initial stage can be ascribed to the sidewall growth due to its intrinsic crystal structure in rocksalt. 22,27 As the reaction continues, some of the vertically grown nanowires, after growing to a certain length, turn to the inclined 〈111〉 direction in growth (Fig. 7b).…”
Section: Resultsmentioning
confidence: 99%
“…Among various as-grown nanowire systems (Krylyuk et al, 2011; Chou et al, 2012; Huang et al, 2015; Han et al, 2016; Maliakkal et al, 2016; Nagashima et al, 2016; Yang et al, 2017), the InGaAs type is regarded as one of the most appealing systems for nano-device fabrication due to its versatile features such as excellent optical properties, high carrier mobility, absence of defects, and superb quantum confinement (Kim et al, 2006; 2017; Heurlin et al, 2015; Shen et al, 2015; Chen & Dayeh, 2017; Qu et al, 2017). Moreover, the optical spectrum of InGaAs type nanowires is theoretically predicted to cover a broad range, from visible light up to the infrared region by tuning the content of In in In x Ga 1− x As, which is of great significance for booming photonic applications.…”
Section: Introductionmentioning
confidence: 99%