Tailoring of defect luminescence in CVD grown monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mtext>MoS</mml:mtext></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>film

Deb, Swarup; Chakrabarti, Poulab; Mohapatra, Pranab K.; Dhar, Subhabrata

doi:10.1016/j.apsusc.2018.03.165

Cited by 25 publications

(19 citation statements)

References 38 publications

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“…The observation of the shallow state may originate from S deficiencies at the grain boundaries during the formation of Film‐MoS 2 . [ 16 ] Consequently, we hypothesize that the sustainability of the MPE‐induced magnetism in Film‐MoS 2 may be associated with the vacancy‐assisted effect, as reported in dilute magnetic semiconductors with room‐temperature ferromagnetism. [ 17 ]…”

Section: Resultsmentioning

confidence: 92%

Room‐Temperature Ferromagnetism of Single‐Layer MoS₂ Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

et al. 2020

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Single‐layered MoS2 is a naturally stable material. Integrating spin, valley, and circularly polarized photons is an interesting endeavor to achieve advanced spin‐valleytronics. In this study, room‐temperature ferromagnetism in MoS2 induced by the magnetic proximity effect (MPE) of yttrium iron garnet (YIG) and the antiferromagnetic coupling at the interface is demonstrated. Insulating YIG without charge carriers is an excellent magnetic candidate featuring a long spin diffusion length and remarkable surface flatness, enabling long‐range magnetic interactions with MoS2. Spin‐resolved photoluminescence spectroscopy and magnetic circular dichroism (MCD) reveal that the spin‐polarized valleys of MoS2 can achieve sustained ferromagnetism even at room temperature. The bandgap‐sensitivity of MCD further demonstrates the extent of antiferromagnetic coupling between the MPE‐induced moments of MoS2 and YIG. This work provides a layer‐selected approach to study magnetic interactions/configurations in the YIG/MoS2 bilayer and highlights the role of MoS2 in achieving the MPE toward high temperature.

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Section: Resultsmentioning

confidence: 92%

Room‐Temperature Ferromagnetism of Single‐Layer MoS₂ Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

et al. 2020

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“…13a were attributed to the excitonic transitions at the K point of the Brillouin zone in bulk MoS 2 which are the direct-gap transitions between the maxima of split valance bands and the minimum of the conduction band. 1,29,48,49 Figure 13b and c depicts the plots of the a and (ahm) 1/2 vs. hm of the films. The absorption coefficients of the films were calculated using the following relation:…”

Section: Resultsmentioning

confidence: 99%

“…Initially, researchers have intensely focused on the exfoliation method for obtaining monolayers of MoS 2 films and it is still the most commonly used method for the growth of MoS 2 films. However, it has been recently thought that the exfoliation method is not suitable for their large-scale production 29,30 because exfoliation results in the formation of MoS 2 flakes with random thicknesses at random distributions. 31,32 Therefore, they are considered to be limited in terms of controlling the thickness and thus the number of MoS 2 layers.…”

Section: Introductionmentioning

confidence: 99%

MoS2 Thin Films Grown by Sulfurization of DC Sputtered Mo Thin Films on Si/SiO2 and C-Plane Sapphire Substrates

Akçay

Тиванов

Özçelik

2021

Journal of Elec Materi

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Here we report the growth of molybdenum disulfide (MoS 2) films with different thicknesses on silicon dioxide/silicon (SiO 2 /Si) and c-plane sapphire substrates by sulfurization of direct current (DC) sputtered Mo precursor films in a chemical vapor deposition furnace with sulfur powder at 900°C. The structural, morphological, optical, and electrical properties of the films on different substrates were investigated through a series of characterization in detail. X-ray diffraction (XRD) results showed that the grown films on sapphire substrates had better crystallization and a well-stacked layered structure than the films on SiO 2 /Si substrates. The frequency difference between the characteristic modes E 1 2g and A 1g of hexagonal phase MoS 2 was determined as $ 26 cm À1 which is consistent with the typical value of bulk MoS 2. Energy-dispersive x-ray (EDX) spectra exhibited that the films were near-stoichiometric. A small shift towards the lower binding energies in the Mo 3d 5/2 peak positions was observed due to the valency of Mo below +4 depending on the compositional ratios of the films in xray photoelectron spectroscopy (XPS) spectra. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analysis indicated that the films had smooth surfaces and a well-packed crystal structure. However, when the thickness of the films deposited on sapphire substrates increased, the strain between the sapphire substrate and MoS 2 film caused the formation of the micro-domes in the film. In addition, the films exhibited high absorption and reflection properties in the near-infrared (NIR) and mid-infrared (MIR) regions in Fourier transform infrared (FTIR) analysis. Therefore, it is considered that the films can be used for photodetector applications in these regions and infrared shielding coating applications.

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“…Here, we present a detailed study of manganese doping in 1L-MoS 2 through pulsed laser deposition (PLD) technique and its influence on the optical properties of the films, which are grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) technique [24,25]. Our investigation using high resolution X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Raman and PL spectroscopy reveals two clearly distinct regimes of Mn-incorporation in 1L-MoS 2 .…”

mentioning

confidence: 99%

“…Strictly monolayer (1L) MoS 2 films were grown on c-sapphire substrates by the microcavity based CVD route where molybdenum trioxide (MoO 3 ) and sulfur (S) powders were used as precursors and argon (Ar) was used as the carrier gas. More details about the growth can be found elsewhere [24,25]. Manganese (Mn) was deposited on these layers using pulsed laser deposition (PLD) technique where a polycrystalline Mn pellet was used as target.…”

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confidence: 99%

Effect of manganese incorporation on the excitonic recombination dynamics in monolayer MoS$_2$

Chakrabarti,

Yadav,

Deb

et al. 2022

Preprint

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Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy techniques we investigate the incorporation of Manganese (Mn) in monolayer (1L)-MoS 2 grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) method.These layers are coated with different amount of Mn by pulsed laser deposition (PLD) technique and temperature dependent photo-luminescence (PL) spectroscopic study has helped us in understanding how such deposition affects the dynamics of excitonic recombination in this system. The study further reveals two distinctly different Mn-incorporation regimes. Below a certain critical deposition amount of Mn, thin Mn-coating with large area coverage is found on MoS 2 layers and in this regime, substitution of Mo ions by Mn is detected through XPS. Dewetting takes place when Mn-deposition crosses the critical mark, which results in the formation of Mn-droplets on MoS 2 layers. In this regime, substitutional incorporation of Mn is suppressed, while the Raman study suggests an enhancement of disorder in the lattice with the Mn-deposition time. From PL investigation, it has been found that the increase of the amount of Mn-deposition not only enhances the density of non-radiative recombination channels for the excitons but also raises the barrier height for such recombination to take place. The study attributes these non-radiative transitions to certain Mo related defects (either Mo-vacancies or distorted Mo-S bonds), which are believed to be generated in large numbers during Mn-droplet formation stage as a result of the withdrawal of Mn ions from the Mo-substitutional sites.

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Tailoring of defect luminescence in CVD grown monolayerMoS2film

Cited by 25 publications

References 38 publications

Room‐Temperature Ferromagnetism of Single‐Layer MoS₂ Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

Room‐Temperature Ferromagnetism of Single‐Layer MoS₂ Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

MoS2 Thin Films Grown by Sulfurization of DC Sputtered Mo Thin Films on Si/SiO2 and C-Plane Sapphire Substrates

Effect of manganese incorporation on the excitonic recombination dynamics in monolayer MoS$_2$

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Tailoring of defect luminescence in CVD grown monolayerMoS2film

Cited by 25 publications

References 38 publications

Room‐Temperature Ferromagnetism of Single‐Layer MoS2 Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

Room‐Temperature Ferromagnetism of Single‐Layer MoS2 Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

MoS2 Thin Films Grown by Sulfurization of DC Sputtered Mo Thin Films on Si/SiO2 and C-Plane Sapphire Substrates

Effect of manganese incorporation on the excitonic recombination dynamics in monolayer MoS$_2$

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Room‐Temperature Ferromagnetism of Single‐Layer MoS₂ Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet

Room‐Temperature Ferromagnetism of Single‐Layer MoS₂ Induced by Antiferromagnetic Proximity of Yttrium Iron Garnet