Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High‐Performance Small‐Molecule‐Based Ternary Memory Device with Low Threshold Voltage

Miao, Shifeng; Li, Hua; Xu, Qingfeng; Li, Youyong; Ji, Shun‐Jun; Li, Najun; Wang, Lihua; Zheng, Junwei; Lu, Jianmei

doi:10.1002/adma.201202319

Cited by 137 publications

(102 citation statements)

References 34 publications

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“…The occurrence of Poole-Frenkel emission is likely owing to the charge transport of the PF 14 -b-Piso n s-filled charge traps to form the trap-free environment. 34 We demonstrated the formation of a donor-acceptor diblock copolymer system whose resistive switching behaviors can be manipulated for efficient digital information storage. Stretchable memory devices, moreover, were fabricated with volatile SRAM and nonvolatile WORM characteristics using PF 14 -b-Piso 10 and PF 14 -b-Piso 60 as the active materials, respectively.…”

Section: Resultsmentioning

confidence: 99%

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Wang

Saito

et al. 2016

NPG Asia Mater

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Diblock copolymers consisting of electron-donating poly[2,7-(9,9-dihexylfluorene)] (PF) rods and electron-withdrawing poly (pendent isoindigo) (Piso) coils were designed and synthesized through a click reaction. The electronic properties and interchain organization of the copolymers could be tuned by varying the PF/Piso ratio (PF 14 -b-Piso n (n = 10, 20, 60 and 100)). The highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels of the studied polymers were progressively reduced as the length of Piso increased, affecting the charge trapping and intramolecular charge transfer environment between PF and Piso domains. Thermally treated PF 14 -b-Piso n thin films exhibited a clear nanofibrillar structure, and the d-spacing was enhanced systematically as the Piso chain length increased. Resistive memory characteristics were explored with a sandwich indium tin oxide/PF 14 -b-Piso n s/Al device configuration. The enhanced conjugated PF conducting channels led to stable resistance switching behavior, exhibiting volatile SRAM (static random access memory) (PF 14 -b-Piso 10 ) and nonvolatile WORM (write-once-read-many-times) (PF 14 -b-Piso 20 , PF 14 -b-Piso 60 , PF 14 -b-Piso 100 ) characteristics with a large ON/OFF ratio (10 6 ) and a stable retention time (10 4 s). A more appealing feature is that such memory cells were integrated on a soft poly(dimethylsiloxane) substrate, allowing for the development of a stretchable data storage device. Reliable and reproducible electrical characteristics, including SRAM-and WORM-type memories, could be explored as the device was stretched under an applied tensile strain ranging from 0 to 50%. The studied donor-acceptor copolymers indeed showed great potential for stretchable electronic applications with controllable digital information storage characteristics. NPG Asia Materials (2016) 8, e298; doi:10.1038/am.2016.112; published online 26 August 2016 INTRODUCTION Polymer-based electrical bistable memory devices have been extensively studied owing to their advantages of structural flexibility, low-cost, printability and three-dimensional stacking. 1-3 Such memories can be switched between high and low resistance states (that is, OFF and ON states) by applying an external electric field. [4][5][6][7][8][9][10][11][12] Electrical memory characteristics can generally be divided into two categories, namely nonvolatile (for example, WORM (writeonce-read-many-times) and flash) and volatile memory (for example, dynamic random access memory and SRAM (static random access memory)), which show different tendencies for the stored charges to dispel. The volatility of these digital information storage devices can be controlled by (1) the charge transfer or charge trapping ability of the active materials and (2) the morphological packing structures in the memory layers. Conjugated block copolymers can effectively manipulate charge storage volatility because of their unique self-organization properties, on the basis of the chemical structures of

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Section: Resultsmentioning

confidence: 99%

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Wang

Saito

et al. 2016

NPG Asia Mater

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“…of switching mechanisms. 59 Based on density functional theory (DFT) calculation, compound 6 was predicted to have almost planar configuration while compound 5 possessed a twisted structure with a dihedral angle of 48.25°, and the difference might come from the change of centre moieties. [56][57][58] This review covers the recent progress on organic small molecules and inorganic-organic hybrid polymers based ORM.…”

Section: -26mentioning

confidence: 99%

Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements

Wang

et al. 2015

J. Mater. Chem. C

156

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The organic resistance memory has attracted a lot of attentions due to its high scalability, flexibility, easy processing, low fabrication cost, etc. Organic small molecules, which own well-defined structures and more accurate experimentsimulation matching, have been widely explored as the active materials for the application in organic resistance memory. In addition, inorganic-organic hybrid polymers have been expected to have charming resistive switching properties because they can potentially combine the advantages of both inorganic materials and organic polymers. This review presents the recent progress of organic resistance memory based on several families of organic small molecules and some typical inorganic-organic hybrid polymers, and the discussion on their structure-property relationships. 53,54 Since then, great progresses have been achieved. The welldefined structures of organic small molecules make them have good batch-to-batch reproducing ability in processing. In addition, the more accurate experiment-simulation matching of organic small molecules is favour for better understanding

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“…Later, the study of new ultra-high density storage materials then emerged as a possible solution to the challenge of vast information produced every day. To obtain superior materials and devices, many aspects had been studied such as adjusting the length of conjugated system [24] and alkyl chain [33,34], tuning the molecular planarity [35], optimizing the molecular or electrode deposition rate [36]. However, in most of these studies, the composition of the molecules (functional groups or main framework) had been changed, which would plainly cause differences in the performance of the molecules.…”

Section: Introductionmentioning

confidence: 99%

Two quinoxaline derivatives designed from isomer chemistry for nonvolatile ternary memory device applications

et al. 2015

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Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High‐Performance Small‐Molecule‐Based Ternary Memory Device with Low Threshold Voltage

Cited by 137 publications

References 34 publications

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

High-performance stretchable resistive memories using donor–acceptor block copolymers with fluorene rods and pendent isoindigo coils

Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements

Two quinoxaline derivatives designed from isomer chemistry for nonvolatile ternary memory device applications

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