Tailoring of nanocrystal sizes in CdSe films prepared by chemical deposition

Trojánek, F.; Cingolani, R.; Cannoletta, Donato; Mikeš, D.; Němec, Petr; Uhlířová, Eva; Rohovec, Jan; Malý, P.

doi:10.1016/s0022-0248(99)00752-6

Cited by 41 publications

(24 citation statements)

References 11 publications

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“…We should mention that the occurrence of deep defect induced luminescence in nanocrystalline CdSe, prepared by quite different techniques as chemical deposition [5] or molecular beam epitaxy (MBE) [6] has been repeatedly reported in the recent literature. The same luminescence was also observed in three-dimensional close-packed solids of CdSe quantum dots [7].…”

Section: Nmmentioning

confidence: 99%

Deep level defect luminescence in cadmium selenide nano-crystals films

Babentsov¹,

Riegler²,

Schneider³

et al. 2005

Journal of Crystal Growth

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Section: Nmmentioning

confidence: 99%

Deep level defect luminescence in cadmium selenide nano-crystals films

Babentsov¹,

Riegler²,

Schneider³

et al. 2005

Journal of Crystal Growth

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“…Nevertheless, as it was firstly predicted theoretically, intrinsic deep levels may exist even in well passivated QDs [11,12]. During the last years, specific deep-level luminescence was consistently observed in CdTe and CdSe QDs [13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Defects in quantum dots of IIB–VI semiconductors

Babentsov

Сизов

2008

Opto-Electronics Review

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This review discusses the properties of structural defects in quantum dots of IIB–VI semiconductors. A great part of this knowledge has been developed in the last years and combined with the improvement in passivation technologies has contributed significantly to the nanotechnology.In this review we introduced the main characterization methods which are used for the study of defects in the nanoform of semiconductors, presented a short description of how native defects can influence the emission spectra, underlined the restrictions which the Auger and deep-level defect recombination imposes on the excitonic emission. We also highlighted the importance of the defect passivation associated with efficiency and photostability of devices.

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“…The process is readily scalable to large-area processing. There are many investigations on the growth of the CdSe thin films by CBD, especially on the influence of growth parameters such as temperature [1], Cd:Se ratio [7], light illumination of solution during CBD [8] and anneling [6], on the structural and optical properties of the films. In this paper the quality of CBD-CdSe thin films is analyzed at different conditions of temperature, concentration of reactants and deposition time.…”

Section: Introductionmentioning

confidence: 99%

“…The glass slides were cleaned as follows: (i) HCl 15 min, (ii) rinsing thoroughly with deionized water and (iii) cleaning with acetone. CdSe thin films were deposited using freshly prepared aqueous solutions of Cd salt (Cadmium sulphate) concentrations in the range 0.2 -0.4 M, complexed with aqueous ammonia in the range from 3.8 to 14 M for Cd 2+ ions slow release and sodium selenosulphate (0.118 and 0.16 M) as a source of Se 2-ions prepared according to F. Trojánek et al [8] and G. Hodes [9]. The glass slides were immersed in a mixture of CdSO 4 /NH 4 OH for 5 minutes before the solution of Na 2 SeSO 3 was added.…”

Section: Introductionmentioning

confidence: 99%

XPS, SEM and XRD investigations of CdSe films prepared by chemical bath deposition

Vargas‐Hernández

Lara

Vallejo

et al. 2005

Physica Status Solidi (b)

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Chemical bath deposition (CBD), a direct low cost technique that involves a cadmium salt solution, a complexing agent and a chalcogen source, was used to prepare CdSe semiconductor films. The most favourable conditions for acceptable quality CdSe films grown on glass were obtained. Commercially available microscope glass slides (with a size of 1 cm × 1 cm × 1 mm) were used as substrates to deposit CdSe films. CdSe films were deposited in a freshly prepared aqueous solution containing CdSO 4 (0.2 -0.4 M), NH 4 OH (3.8 -14 M) as a complexing agent for slow release of Cd 2+ ions, and Na 2 SeSO 3 (0.118 and 0.16) as a source of Se 2-ions. The solutions were prepared in deionized water. The glass slides were immersed in a mixture of CdSO 4 -NH 4 OH for 5 min before the solution of Na 2 SeSO 3 was added. The bath temperature varied from 20 to 60 °C. Structural and morphological quality of the films was analyzed by XRD, SEM, EDS, and XPS. The results show that the crystallinity of the CdSe films as-deposited is improved by increasing temperature. The initial growth stages of CdSe films at 20 and 60 °C start on CdO x and Cd(OH) 2 buffer layers respectively.

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Tailoring of nanocrystal sizes in CdSe films prepared by chemical deposition

Cited by 41 publications

References 11 publications

Deep level defect luminescence in cadmium selenide nano-crystals films

Deep level defect luminescence in cadmium selenide nano-crystals films

Defects in quantum dots of IIB–VI semiconductors

XPS, SEM and XRD investigations of CdSe films prepared by chemical bath deposition

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