Tailoring of Photoluminescence Properties in All‐Vacuum Deposited Perovskite via Ruddlesden–Popper Faults

Wang, Liang; Li, Luying; Jia, Shuangfeng; Meng, Weiwei; Cheng, Yongfa; Liu, Zunyu; Li, Li; Yan, Shuwen; Gao, Yuan; Wang, Jianbo; Tang, Jiang

doi:10.1002/adfm.202210286

Cited by 6 publications

(2 citation statements)

References 40 publications

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“…Region A showcases a typical [CsBr]–[CsBr] rock-salt stacking pattern that exhibits notable cracking along the RP fault planes. This configuration has been previously reported both in pure CsPbBr 3 perovskites , and various alloyed perovskites. , Prior studies have indicated that such an arrangement does not introduce deep-level defects within the perovskites. ,, This observation is consistent with our analysis, as this configuration does not contain the cation antisite defects or V Br defects that we previously identified as deep-level defects. The intrinsic driving force for crack formation in this configuration lies in the disruption of the local charge equilibrium.…”

Section: Resultssupporting

confidence: 93%

Deciphering the Atomic-Scale Structural Origin for Photoluminescence Quenching in Tin–Lead Alloyed Perovskite Nanocrystals

Wang,

Li,

Yang

et al. 2024

ACS Nano

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The development of tin−lead alloyed halide perovskite nanocrystals (PNCs) is highly desirable for creating ultrastable, eco-friendly optoelectronic applications. However, the current incorporation of tin into the lead matrix results in severe photoluminescence (PL) quenching. To date, the precise atomic-scale structural origins of this quenching are still unknown, representing a significant barrier to fully realizing the potential of these materials. Here, we uncover the distinctive defect-related microstructures responsible for PL quenching using atomic-resolution scanning transmission electron microscopy and theoretical calculations. Our findings reveal an increase in point defects and Ruddlesden−Popper (RP) planar faults with increasing tin content. Notably, the point defects include a spectrum of vacancies and previously overlooked antisite defects with bromide vacancies and cation antisite defects emerging as the primary contributors to deep-level defects. Furthermore, the RP planar faults exhibit not only the typical rock-salt stacking pattern found in pure Pb-based PNCs but also previously undocumented microstructures rich in bromide vacancies and deep-level cation antisite defects. Direct strain imaging uncovers severe lattice distortion and significant inhomogeneous strain distributions caused by point defect aggregation, potentially breaking the local force balance and driving RP planar fault formation via lattice slippage. Our work illuminates the nature and evolution of defects in tin−lead alloyed halide perovskite nanocrystals and their profound impact on PL quenching, providing insights that support future material strategies in the development of less toxic tin−lead alloyed perovskite nanocrystals.

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Section: Resultssupporting

confidence: 93%

Deciphering the Atomic-Scale Structural Origin for Photoluminescence Quenching in Tin–Lead Alloyed Perovskite Nanocrystals

Wang,

Li,

Yang

et al. 2024

ACS Nano

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“…Lead halide perovskites have emerged as promising candidates for next-generation optoelectronic devices, including solar cells, lasers, and light-emitting diodes (LEDs). − Vacuum-deposited perovskite light-emitting diodes (PeLEDs) have recently demonstrated an improved external quantum efficiency of 16.4%, which is encouraging considering the limited work done so far. Moreover, they have been integrated with thin-film transistor backplanes to fabricate active-matrix PeLED displays.…”

Section: Introductionmentioning

confidence: 99%

Study of Electron Beam-Initiated Structure Damage and Recovery of Perovskite Thin Films

Yan,

Shen,

Liu

et al. 2024

J. Phys. Chem. C

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Perovskite light-emitting diodes (PeLEDs) are rising techniques that have attracted worldwide attention, and the community is increasingly considering vapor-phase deposition (VPD) as a promising route to realize reliable perovskite displays. Transmission electron microscopy (TEM) has been extensively applied to characterize the structural details of perovskites and related devices. However, under conventional imaging conditions, the high-energy electron beam is sufficient to cause collapse of the original crystal structure and the electron radiation effect on perovskites prepared by VPD has not been systematically studied. In this study, the damage and recovery processes of vacuumdeposited perovskite nanocrystalline structures are systematically studied by comprehensive transmission electron microscopy (TEM) techniques. It is observed that with prolonged electron beam irradiation, the CsPbBr 3 nanocrystals surrounding the irradiation zone are gradually damaged, generating Pb nanoparticles, whereas the crystal structure within the irradiated region is not damaged. Further theoretical analysis reveals that a high-energy electric field is formed at the edge of the irradiation zone due to electron beam irradiation, which would lead to Br ion migration to the irradiation center and the breakdown of the CsPbBr 3 nanocrystalline structure at the periphery regions. When the electron beam is shifted to the periphery region, the Pb nanoparticles gradually disappear with the regrowth of CsPbBr 3 nanocrystals, which indicates that Br ions migrate back to the newly positively charged irradiation zone. The mechanism of the reversible transformation process is highly related to the electron beam-induced electric field, which would facilitate a deeper understanding of the electron beam irradiation effect on perovskite materials and help understand and enhance the stability of perovskites in devices.

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Semitransparent Perovskite Solar Cells with an Evaporated Ultra‐Thin Perovskite Absorber

Zhang,

Ji,

Jia

et al. 2023

Adv Funct Materials

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Metal halide perovskites are of great interest for application in semitransparent solar cells due to their tunable bandgap and high performance. However, fabricating high‐efficiency perovskite semitransparent devices with high average visible transmittance (AVT) is challenging because of their high absorption coefficient. Here, a co‐evaporation process is adopted to fabricate ultra‐thin CsPbI3 perovskite films. The smooth surface and orientated crystal growth of the evaporated perovskite films make it possible to achieve 10 nm thin films with compact and continuous morphology without pinholes. When integrated into a p‐i‐n device structure of glass/ITO/PTAA/perovskite/PCBM/BCP/Al/Ag with an optimized transparent electrode, these ultra‐thin layers result in an impressive open‐circuit voltage (VOC) of 1.08 V and a fill factor (FF) of 80%. Consequently, a power conversion efficiency (PCE) of 3.6% with an AVT above 50% is demonstrated, which is the first report for a perovskite device of a 10 nm active layer thickness with high VOC, FF and AVT. These findings demonstrate that deposition by thermal evaporation makes it possible to form compact ultra‐thin perovskite films, which are of great interest for future smart windows, light‐emitting diodes, and tandem device applications.

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Tailoring of Photoluminescence Properties in All‐Vacuum Deposited Perovskite via Ruddlesden–Popper Faults

Cited by 6 publications

References 40 publications

Deciphering the Atomic-Scale Structural Origin for Photoluminescence Quenching in Tin–Lead Alloyed Perovskite Nanocrystals

Deciphering the Atomic-Scale Structural Origin for Photoluminescence Quenching in Tin–Lead Alloyed Perovskite Nanocrystals

Study of Electron Beam-Initiated Structure Damage and Recovery of Perovskite Thin Films

Semitransparent Perovskite Solar Cells with an Evaporated Ultra‐Thin Perovskite Absorber

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