Tailoring photodetection performance of self-powered Ga₂O₃ UV solar-blind photodetectors through asymmetric electrodes

Abstract

Self-powered solar-blind UV detectors have become an increasingly critical role in the sustainable development of photodetectors with low energy consumption. In this work, the design of electrode structures, including the...

A broadband self-powered photodetector based on NiPS3

“…Moreover, the zero bias I – t measurements in Fig. S4b (ESI†) demonstrated no photoelectric response, indicating that the symmetric device had no self-powered phenomenon, 55 which accords with the scenario described before.…”

“…5a, in the dark condition, after the formation of Schottky contacts between NiPS 3 and gold, the barrier height for the larger contact area (left side) turned to be lower than the smaller one (right side), which is because the larger metal–semiconductor contact interface could offer more recombination centers for carriers and give rise to a reduction of the Schottky barrier. 55 At zero bias, when the device was irradiated (Fig. 5b), electrons in the valence band of NiPS 3 were excited to the conduction band and thus the photogenerated electrons migrated away from the metal–semiconductor interface, driven by the built-in electric field.…”

High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks

“…Subsequently, the accelerated transfer of free charge carriers to the corresponding metal electrodes increases the photosensitivity and speeds up the response. 41–46…”

“…39,40 Fortunately, OFETs with asymmetric electrodes generate a built-in electric field due to the difference in the source and drain work functions, which enables the fast separation of photogenerated carriers at the heterogeneous interface, enhancing performance and improving the response speed and sensitivity. 41–46 On the other hand, the asymmetric electrode structure can greatly reduce the power consumption of transistor devices and facilitate organic electronic devices to improve the electrical and optical properties and enrich functionality. 47–50…”

Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga2O3/Electrolyte Heterojunction with High Stability

“…A small part of the holes will move to the Ti/Ga 2 O 3 contact surface and be trapped by defects such as oxygen vacancies on the Ti substrate, resulting in a decrease of the Schottky barrier . The other part of the hole will drift into the electrolyte and oxidize the OH – in the captured electrolyte to OH*­(h + + OH – = OH*), while the photogenerated electrons will diffuse to the Ti substrate and reach the Pt electrode through the external circuit to reduce the OH* in the electrolyte to OH – (e – + OH* = OH – ), thereby achieving self-powered detection. , In this work, the Ti sheet not only provides a flexible substrate but also acts as a transport channel for carriers, which can accelerate transport.…”