Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions

Park, Young Ran; Kim, Hyeong-Jin; Im, Sungjin; Seo, Sunae; Shin, Keesam; Choi, Won Kook; Hong, Young June

doi:10.1063/1.4939910

Cited by 9 publications

(7 citation statements)

References 36 publications

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“…Such less‐hybridized PVK layer on GO was observed to have energy levels at lower energy positions and to exhibit the reduced Δ h 3 for superior QD‐LEDs performances with high hole conduction capability (Figure ). Accordingly, the interfacial orbital dehybridization is a key to vary the electronic energy levels of PVK layer for designing high efficiency QD‐LEDs …”

Section: Resultsmentioning

confidence: 99%

Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Park

Choi

Kim

et al. 2017

Adv Materials Inter

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This study investigates the effect of graphene oxide (GO) interlayer on electrical and electroluminescent (EL) performances of quantum‐dot light emitting diodes (QD‐LEDs) with poly(N‐vinylcarbazole, PVK)/V2O5–x hole transport layers. The control QD‐LEDs basically consist of multilayer heterojunctions of hole transport/injection PVK/V2O5–x bilayers, QD light emission layer, and electron transport ZnO nanoparticle layer, all of which are sequentially spin coated on indium‐tin‐oxide/glass substrates. The QD‐LEDs with GO interlayer inserted between PVK and V2O5–x present superior electrical rectification and EL efficiency than those without GO interlayer. The hole‐only devices with GO interlayer evidence higher hole conduction capability than those without GO by an order of magnitude. From ultraviolet photoelectron spectroscopy analysis, the hole transport enhancement in PVK/GO/V2O5–x heterojunctions is found to be responsible for reduced height of the highest hole barrier at QD/PVK interface from 1.74 to 0.75 eV by means of downshift of energy levels of PVK. Such energy level variation of PVK is discussed in terms of heterointerfacial orbital hybridization at PVK/V2O5–x, which are validated by diverse spectroscopies. The ability of GO interlayer to shift the PVK energy levels can be exploited for developing high‐performance optoelectronics and electronics with hole transport organic/transition metal oxide heterojunctions.

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Section: Resultsmentioning

confidence: 99%

Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Park

Choi

Kim

et al. 2017

Adv Materials Inter

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“…Graphene has potential as a flexible transparent electrode due to its unique electrical properties, excellent mechanical flexibility, and high transmittance . However, graphene has lower WF (≈4.4 eV) than ITO anode (≈4.7‐4.9 eV), so the hole injection energy barrier between graphene anode and overlying organic layers is large. A polymeric hole injection buffer layer composed of PEDOT:PSS:PFI on graphene anode can overcome this large energy barrier for hole injection ( Figure a) .…”

Section: Conducting Polymer‐based Anode Buffer Layers In Light‐emittimentioning

confidence: 99%

“…The efficiency of optoelectronic devices is strongly dependent on the properties of the interfaces between stacked layers; therefore the efficiency of the devices can be advanced by controlling these properties. The simplest and most effective way to modify the interface states is to insert buffer layers (also called interfacial layers or interlayers) between the stacked layers.…”

Section: Introductionmentioning

confidence: 99%

Conducting Polymers as Anode Buffer Materials in Organic and Perovskite Optoelectronics

Ahn

Jeong

Han

et al. 2016

Advanced Optical Materials

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This review focuses on the importance and the key functions of anode interfacial layers based on conducting polymers in organic and organic–inorganic hybrid perovskite optoelectronics. Insertion of a buffer layer between electrode and semiconducting layers is the most common and effective way to control interfacial properties and eventually improve device characteristics, such as luminous efficiency in light‐emitting diodes and power conversion efficiency in solar cells. Conducting polymers are considered as one of the most promising materials for future organic and organic–inorganic hybrid electronics because of advantages such as a simple film‐forming process and ease of tailoring electrical and physical properties; as a result, using these polymers is compatible with the production of large‐area, low‐cost, and solution‐processed flexible optoelectronic devices. This review introduces the limitations of anode buffer layers based on conducting polymers and then we will provide recent research trends of material engineering to overcome these problems.

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“…For instance, the injection efficiency of carriers from the adjacent charge transport layers (CTL) into QDs is vital to the device performance considering the electron and hole need to be injected into the QDs layer successfully and form an exciton, followed by radiative recombination. To promote carrier injection/transport efficiency, various strategies have been devoted to material synthesis and device structure design [ 18 , 19 ]. Meanwhile, the fabrication process is complicated by processes such as modifying the structure of QDs or inserting a buffer layer composed of organic material, which leads to an increase in the production cost [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

High-Performance Blue Quantum Dot Light Emitting Diode via Solvent Optimization Strategy for ZnO Nanoparticles

Wang

Zhao

et al. 2021

Nanomaterials

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Here, we report on the high-performance blue quantum dots (QDs) light-emitting diodes (QLEDs), in which the ZnO nanoparticles (NPs) are employed as the electron transport layer (ETL) and optimized with different alcohol solvents. The experimental results demonstrate that the properties of solvent used for ZnO NPs—such as polarity, viscosity and boiling point—play a crucial role in the quality of film where they modulate the electron injection across the QDs/ETL interface. The maximum current efficiency of 3.02 cd/A and external quantum efficiency (EQE) of 3.3% are achieved for blue QLEDs with ZnO NPs dispersed in butanol, exhibiting obvious enhancement compared with the other solvents. This work provides a new method to select proper solvent for ETL which can further improve the device performance.

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Tailoring the highest occupied molecular orbital level of poly(N-vinylcarbazole) hole transport layers in organic multilayer heterojunctions

Cited by 9 publications

References 36 publications

Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Graphene Oxide Inserted Poly(N‐Vinylcarbazole)/Vanadium Oxide Hole Transport Heterojunctions for High‐Efficiency Quantum‐Dot Light‐Emitting Diodes

Conducting Polymers as Anode Buffer Materials in Organic and Perovskite Optoelectronics

High-Performance Blue Quantum Dot Light Emitting Diode via Solvent Optimization Strategy for ZnO Nanoparticles

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