Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation

Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing

“…[4][5][6][7][8][9][10][11][12] Among the various methods for sulfur passivation, (NH 4 ) 2 S solution treatment was commonly adopted for various III-Vs because of simplicity of the process for laboratory experiments. [13][14][15] However, the S passivation using (NH 4 ) 2 S solution may not be appropriate for industrial mass-production since it is a wet chemical approach which can cause non-uniform S distribution on the substrate, difficulty in controlling S concentration, and surface residues of contaminants.…”

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

“…The PL of antimonide alloys is usually dominated by surface states, bound carrier recombination and vacancy defect-related emissions [96,97]. Surface passivation can improve the optical properties of these materials because it eliminates surface dangling bonds and oxides [8]. Low-dimensional antimonide alloy structures were then grown as the MBE technology matured.…”

“…Wet methods of sulfur passivation based on the use of sulfur solutions have been proved to effectively reduce the surface states. For example, (NH 4 ) 2 S and Na 2 S solutions are usually used to passivate GaSb surfaces [8]. Figure 11 presents the passivation time-dependent emission intensities of GaSb samples.…”

“…Further development of spectroscopic techniques will therefore be helpful in the design and improvement of the next generation of optoelectronic devices. Additionally, two-dimensional (2D) materials offer further promise for the development of a new range of fundamental optoelectronic materials owing to their high crystal quality features and rich photophysical properties that will provide new material options for next generation optoelectronic devices [2,[8][9][10]. Therefore, owing to the advantages of 2D materials, further research should be directed to the epitaxy and optical properties of GaSb materials.…”

“…Problems that occur on the GaSb surface during reactive processing, such as high surface state densities, surface Fermi level pinning and a residual native oxide layer, have affected the optical properties, including their photoresponse range and luminescence intensities, of GaSb-based devices. Therefore, procedures that involve the removal of native oxides and the fabrication of passivation coatings are necessary to overcome such problems [8]. Improvements in the surface properties of GaSb materials have led to excellent optoelectronic device performances.…”