Conspectus
Photoelectrochemical water splitting is a promising
avenue for
sustainable production of hydrogen used in the chemical industry and
hydrogen fuel cells. The basic components of most photoelectrochemical
water splitting systems are semiconductor light absorbers coupled
to electrocatalysts, which perform the desired chemical reactions.
A critical challenge for the design of these systems is the lack of
stability for the majority of desired semiconductors under operating
water splitting conditions. One strategy to address this issue is
to protect the semiconductor by covering it with a stabilizing insulator
layer, creating a metal–insulator–semiconductor (MIS)
architecture, which has demonstrated improved stability. In addition
to enhanced stability, the insulator layer may significantly affect
the electron and hole transfer, which governs the recombination rates.
Furthermore, the insertion of an insulator layer leads to the introduction
of additional insulator/electrocatalyst and insulator/semiconductor
interfaces. These interfaces can impact the system’s performance
significantly, and they need to be carefully engineered to optimize
the efficiencies of MIS systems. In this Account, we describe our
recent progress in shedding light on the critical role of the insulator
and the interfaces on the performance of MIS systems. We discuss our
findings by focusing on the concrete example of planar n-type Si protected
by a HfO2 insulator layer and coupled to a Ni or Ir electrocatalyst
that performs the oxygen evolution reaction, one of the water splitting
half-reactions. To improve our fundamental understanding of the insulator
layer, we precisely control the HfO2 insulator thickness
using atomic layer deposition (ALD), and we perform a series of rigorous
electrochemical experiments coupled with theory and modeling. We demonstrate
that by tuning the insulator thickness, we can control the flux and
recombination of photogenerated electrons and holes to optimize the
generated photovoltage. Despite optimizing the thickness, we find
that the maximum generated photovoltage in MIS systems is often significantly
lower than the upper performance limit, i.e., there are additional
losses in the system that could not be addressed by optimizing the
insulator thickness. We identify the sources of these losses and describe
strategies to minimize them by a combination of improving the semiconductor
light absorption, removing nonidealities associated with interfacial
defects, and finding alternative insulators with improved charge carrier
selectivity. Finally, we quantify the improvements that can be obtained
by implementing these specific strategies. Our collective work outlines
strategies to analyze MIS systems, identify the sources of efficiency
losses, and optimize the design to approach the fundamental performance
limits. These general approaches are broadly applicable to photoelectrochemical
materials that utilize sunlight to produce value-added chemicals.