Tapping mode microwave impedance microscopy

Lai, Keji; Kundhikanjana, Worasom; Peng, Hailin; Cui, Yong‐Tao; Kelly, Michael A.; Shen, Zhi‐Xun

doi:10.1063/1.3123406

Cited by 44 publications

(35 citation statements)

References 14 publications

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“…Scanning microwave microscopes ͑SMMs͒ 1,2 that combine microwave signal compatibility with the scanning probe microscope have demonstrated the capability to make quantitative material measurements with a resolution of the order of the effective probe size. As a result, reported values for SMM resolution are typically submicrometer [3][4][5] and often less than 100 nm, [6][7][8] though it is noted that such reported values depend on how SMM resolution is defined. 9 SMM-based methods have been developed for spatially resolved, quantitative measurement of a variety of material properties, including complex dielectric constant, [3][4][5]7,10,11 sheet resistance, 6,8 and tip-sample capacitance 12 ͑for comprehensive reviews, see Refs.…”

Section: Introductionmentioning

confidence: 90%

Calibrated nanoscale capacitance measurements using a scanning microwave microscope

Huber¹,

Moertelmaier

Wallis

et al. 2010

Review of Scientific Instruments

136

105

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A scanning microwave microscope (SMM) for spatially resolved capacitance measurements in the attofarad-to-femtofarad regime is presented. The system is based on the combination of an atomic force microscope (AFM) and a performance network analyzer (PNA). For the determination of absolute capacitance values from PNA reflection amplitudes, a calibration sample of conductive gold pads of various sizes on a SiO(2) staircase structure was used. The thickness of the dielectric SiO(2) staircase ranged from 10 to 200 nm. The quantitative capacitance values determined from the PNA reflection amplitude were compared to control measurements using an external capacitance bridge. Depending on the area of the gold top electrode and the SiO(2) step height, the corresponding capacitance values, as measured with the SMM, ranged from 0.1 to 22 fF at a noise level of ~2 aF and a relative accuracy of 20%. The sample capacitance could be modeled to a good degree as idealized parallel plates with the SiO(2) dielectric sandwiched in between. The cantilever/sample stray capacitance was measured by lifting the tip away from the surface. By bringing the AFM tip into direct contact with the SiO(2) staircase structure, the electrical footprint of the tip was determined, resulting in an effective tip radius of ~60 nm and a tip-sample capacitance of ~20 aF at the smallest dielectric thickness.

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Section: Introductionmentioning

confidence: 90%

Calibrated nanoscale capacitance measurements using a scanning microwave microscope

Huber¹,

Moertelmaier

Wallis

et al. 2010

Review of Scientific Instruments

136

105

View full text Add to dashboard Cite

show abstract

“…‫ܥߜ‬ ௧ ሺ‫ݔ‬ Ԧሻ = ‫ܥ‬ሺℎሺ‫ݔ‬ Ԧሻ + ‫ݖ‬ ; ߝ ሺ‫ݔ‬ Ԧሻሻ − ‫ܥ‬ሺℎሺ‫ݔ‬ Ԧሻ + ‫ݖ‬ ; 1ሻ, [5] where ߝ ሺ‫ݔ‬ሻ is the local electric permittivity and h(x) the local thickness of the sample. Eq.…”

Section: Resultsmentioning

confidence: 99%

“…21 In spite of the large number of successful applications of the SMM, a main challenge still remains, namely, the difficulty in mapping the electric permittivity of heterogeneous samples exhibiting large height variations. Until now, most applications have dealt with either heterogeneous 2D planar samples 6,12,22,23 or with homogeneous 3D samples, 24 but they have not addressed the general situation of 3D heterogeneous systems, yet. The emergence of the new 3D electron device technologies (e.g.…”

Section: Introductionmentioning

confidence: 99%

“…First setups employed traditional microwave elements such as microstrips 2 , coaxial waveguides with tapered end 3 or waveguides with aperture 4 as probes. Lately, combined Atomic Force-Scanning Microwave Microscope systems (AFM-SMM) 5,6,7 were able to use AFM probes (conventional or engineered 8 ) as source of the evanescent field. The size of AFM probes can be easily manufactured down to tens of nanometres, enabling a high spatial lateral resolution (see Ref.…”

Section: Introductionmentioning

confidence: 99%

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Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

Biagi

Badino

Fabregas

et al. 2017

Phys. Chem. Chem. Phys.

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We obtained maps of the electric permittivity at ~19 GHz frequencies on non-planar thin film heterogeneous samples by means of combined atomic force-scanning microwave microscopy (AFM-SMM). We show that the electric permittivity maps can be obtained directly from the capacitance images acquired in contact mode, after removing the topographic cross-talk effects. This result demonstrates the possibility to identify the electric permittivity of different materials in a thin film sample irrespectively of their thickness by just direct imaging and processing. We show, in addition, that quantitative maps of the electric permittivity can be obtained with no need of any theoretical calculation or complex quantification procedure when the electric permittivity of one of the materials is known. To achieve these results the use of contact mode imaging is a key factor. For non-contact imaging modes the effects of the local sample thickness and of the imaging distance makes the interpretation of the capacitance images in terms of the electric permittivity properties of the materials much more complex. Present results represent a substantial contribution to the field of nanoscale microwave dielectric characterization of thin film materials with important implications for the characterization of novel 3D electronic devices and 3D nanomaterials.

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“…SMM has also been shown to be sensitive to magnetic domain structure [14] and photovoltaic response [15,16]. Near eld microscopy at microwave frequencies has also been applied via tapping mode technique [17].…”

Section: Introductionmentioning

confidence: 99%

Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy

Fenner

et al. 2012

Acta Phys. Pol. A

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We report recent advances in material characterization on the nanometer scale using scanning microwave microscopy. This combines atomic force microscopy and a vector network analyzer using microwave tip sample interaction to characterize dielectric and electronic material properties on the nanometer scale. We present the methods for calibration as well as applications. Scanning microwave microscopy features calibrated measurements of: (1) capacitance with attofarad sensitivity. For calibration a well characterized array of capacitors (0.1 fF to 10 fF) is used. The method is applied to determine the dielectric properties of thin organic lms, (2) Semiconductor dopant density. Calibration is performed by imaging the cross-section of a standard sample with dierently doped layers (dopant stair case) from 10 16 atoms/cm 3 to 10 20 atoms/cm 3 .

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Tapping mode microwave impedance microscopy

Cited by 44 publications

References 14 publications

Calibrated nanoscale capacitance measurements using a scanning microwave microscope

Calibrated nanoscale capacitance measurements using a scanning microwave microscope

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy

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