We show theoretically that a locally embedded Rashba interaction acts as a strong pinning center for current-driven domain walls and demonstrate efficient capturing and depinning of the wall using a weak Rashba interaction of the order of 0.01 eV Å. Our discovery is expected to be useful for highly reliable control of domain walls in racetrack memories. © 2016 The Japan Society of Applied Physics F ully electric operated magnetic memories are promising for fast and high-density memories. Switching of the magnetization of a thin ferromagnetic layer by applying an electric current has been accomplished using the spintransfer effect. 1,2) Driving a ferromagnetic domain wall by current pulse has also been achieved. Most in-plane magnetic anisotropy systems are in the extrinsic pinning regime, where the wall motion is driven by a non-adiabatic torque, 3,4) while the spin-transfer torque in the intrinsic pinning regime 5) has been reported in perpendicular magnetization material. 6) Recently, several possibilities for using multilayers for fast domain wall motion have been proposed. 7-10) For ultrahigh density memories, the use of a sequence of domain walls on a patterned wire ("race track") controlled by an electric current, called a racetrack memory, has been proposed. 11) For memory applications of such multi-domain wall devices, techniques to stop a moving wall at an intended position precisely and without delay is essential. An artificial pinning site has been proposed for stopping the wall; 12) however, efficient and reliable stopping is difficult because of the difficulty in fabricating well-controlled and uniform pinning centers. Moreover, fast stopping requires a strong pinning potential, which necessitates a large current density for depinning.In this paper, we propose a highly efficient and reliable mechanism to stop a moving domain wall using a locally embedded Rashba spin-orbit interaction. The Rashba interaction generates a strong effective magnetic field when an electric current is injected. 13,14) This effective field leads to strong pinning of a moving wall at the Rashba region if the applied current density is below the capturing threshold j cap . Moving the wall from the pinning center is performed by applying a high current pulse above the depinning threshold j dep . Rashba pinning is highly reliable because introducing a Rashba interaction by attaching a small thin layer of heavy metals in a controlled manner is easy to implement with the present technology. The present mechanism also has the advantage of lower energy consumption compared with geometrical pinning. The fact that the capturing threshold j cap is lower than j dep indicates that the energy required to shift the wall positions over a distance of multiple pinning sites is much lower than that of the geometrical pinning mechanism.The system we consider to demonstrate the Rashba pinning effect is simple; it includes a ferromagnetic wire with the Rashba interaction locally embedded by attaching a small thin film of heavy metals [ Fig. 1(a)...