2016
DOI: 10.1016/j.sse.2015.08.005
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TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures

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Cited by 10 publications
(7 citation statements)
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“…The bias was swept up from 0 V to high voltages with a step of 1 V. Here, a clear J-V n dependence was observed when the voltage is smaller than a kink voltage shown in figure 1(a), which corresponds to the space-charge-limited current conduction (SCLC) mechanism [6]. When the voltage is beyond the kink point, the slope n of J-V in the sample is larger than 2 [7], which is possibly due to the Poole-Frenkel conduction [8].…”
Section: Device Structure and Experimental Resultsmentioning
confidence: 84%
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“…The bias was swept up from 0 V to high voltages with a step of 1 V. Here, a clear J-V n dependence was observed when the voltage is smaller than a kink voltage shown in figure 1(a), which corresponds to the space-charge-limited current conduction (SCLC) mechanism [6]. When the voltage is beyond the kink point, the slope n of J-V in the sample is larger than 2 [7], which is possibly due to the Poole-Frenkel conduction [8].…”
Section: Device Structure and Experimental Resultsmentioning
confidence: 84%
“…The structure includes 500 nm p-Si (111) substrate, 250 nm AlN nucleation layer, 500 nm Al 0.2 Ga 0.8 N transition layer and 400 nm GaN buffer layer. According to reference [8,10], the acceptor-electron and acceptor-hole traps was set as 1.3 eV and 0.6 eV, and both concentrations of × 10 17 cm −3 . A n-type back ground doping of 1 × 10 15 cm −3 was also included in the epitaxial layers.…”
Section: Device Structure For Numerical Simulation (Tcad)mentioning
confidence: 99%
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“…For the p-type samples, a log J-V dependence can be observed at 0-400 V, which corresponds to the space-chargelimited current conduction mechanism [14]. The slope of log J-V starts to get larger from the kink at 400 V, as shown in Figure 2a, which is due to the Poole-Frenkel conduction at 400-600 V [15,16]. However, the log J-V dependence for n-type samples can be also observed in the whole range of 0-600 V, corresponding to the space-charge-limited current conduction mechanism [14].…”
Section: Resultsmentioning
confidence: 98%
“…Due to this very uncertainty about 2DHG, many theoretical and simulation works have adopted the approach to treat the multi-layered epi with a simplified composition of layers or more often to lump them into a single layer, avoiding the issue of 2DHG at the interfaces altogether. 7,8,14,15 We have also carried out extensive Capacitance-Votage Profiling (CV) measurements in the standard frequency range (kHz to MHz), but no convincing evidence of the existence of the hole carrier layer has been found. In this work, the authors demonstrate via measurements and TCAD simulations that an ultra-low frequency CV is a key to the detection of the 2DHG in the epi stack.…”
mentioning
confidence: 99%