TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT

Das, Shreyasi; Kumari, Vandana; Sehra, Khushwant; Gupta, Mridula; Saxena, Manoj

doi:10.1109/tdmr.2021.3103238

Cited by 18 publications

(2 citation statements)

References 32 publications

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“…It consists of two parts, the TCAD and ML algorithms. The TCAD simulation [31,32] involves device modeling, materials definition, physical model selection, mesh division, defect definition, and so on. The ML algorithm can be mainly divided into the following parts: input and output defining, dataset preprocessing, dataset separating, algorithm design, algorithm training, and optimization.…”

Section: Flow Diagram For Degradation Predictionmentioning

confidence: 99%

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

et al. 2022

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In this paper, a novel approach that combines technology computer-aided design (TCAD) simulation and machine learning (ML) techniques is demonstrated to assist the analysis of the performance degradation of GaN HEMTs under hot-electron stress. TCAD is used to simulate the statistical effect of hot-electron-induced, electrically active defects on device performance, while the artificial neural network (ANN) algorithm is tested for reproducing the simulation results. The results show that the ML-TCAD approach can not only rapidly obtain the performance degradation of GaN HEMTs, but can accurately predict the progressive failure under the work conditions with a mean squared error (MSE) of 0.2, informing the possibility of quantitative failure data analysis and rapid defect extraction via the ML-TCAD approach.

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Section: Flow Diagram For Degradation Predictionmentioning

confidence: 99%

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

et al. 2022

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“…[9,10] To avoid the previously cited challenges, the dual-channel (DC) GaN HEMT has been demonstrated as an effective workaround. [11] Such devices can greatly alleviate the nonlinearity of resistances under the high current and the sensitivity of the cutoff frequency to external bias, thus enhancing the device linearity. [12] The implementation of DC-GaN-HEMTs substantially obtains higher power gain capability and cutoff frequency than SC devices, which are of great significances in terms of RF circuit designs.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Geng

2024

Physica Status Solidi (a)

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A detailed analysis of self‐consistent potentials, electric fields, electron distributions, and transport properties of dual‐channel (DC) n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN high‐electron‐mobility transistors (HEMTs) is performed in this article. The 2D electron gas (2DEG) densities and mobility states limited by different scattering mechanisms in channel 1 and channel 2 are obtained, with varying values of doping concentrations, ambient temperatures, Al components, and thicknesses of the back barrier layer. The reduced and increased 2DEG densities are respectively observed in channel 1 and channel 2 with growing Al fractions and thicknesses of the AlxGa1−xN layer. Alloy disorder scattering exhibits a superior effect on carriers in channel 2 due to the lower barrier height and higher permeable electrons, which together with the interface roughness scattering severely depends on the thicknesses and Al fractions of the back barrier layer. Polar optical phonon scattering becomes important at higher temperatures. The trend of individual mobility in channel 1 is exactly opposite to that in channel 2. The parameter variation of the back barrier layer can effectively change the scattering characteristics of the main channel. Low‐temperature mobilities of n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN HEMTs under varied doping concentrations are also obtained. Finally, the results are verified by comparison with the technology computer‐aided design simulations for DC HEMTs.

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Emerging Device Architectures for Space Electronics

Sehra

Raut

Rawal

et al. 2022

HEMT Technology and Applications

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TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT

Cited by 18 publications

References 32 publications

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors

Emerging Device Architectures for Space Electronics

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TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT

Cited by 18 publications

References 32 publications

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors

Emerging Device Architectures for Space Electronics

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Product

Resources

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Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors