TCAD study of DLC coatings for large-area high-power diodes

Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range

“…N t can be tuned in a way to give the equivalent increase of free carriers, while keeping the symmetric J-V curves. As an increase of localized defects in the bandgap due to doping was experimentally verified through the I D /I G ratio, with I D the intensity of the peak originated by disordered sp 2 carbon atoms and I G the intensity of the graphite peak [16], a larger N t is expected for the higher doping concentrations. The temperature dependence of the intrinsic carrier density is completely different from the usual one for semiconductors, because it depends on the form of the G-DOSs: by changing σ, we can modulate this dependence as shown in Fig.…”

“…MIS structures featuring the DLC material as semiinsulating layer on top of silicon have been realized as illustrated in Fig. 3 [15] [16]. The experimental investigations have been extended here accounting for both p-type and ntype Si substrates to correlate the vertical features of the reverse bias condition of the MIS diode to the corresponding regions along the beveled interface of the real power diode from Fig.…”

“…4 shows the experimental J-V curves of the MIS structures with different substrate doping for both Boron-and Nitrogendoped DLCs (the cases with maximum doping level are used here as reference). The doped DLC provides a strong increase of the current under forward bias if compared with the undoped case [15] [16]. Moreover, here we compare the forward-bias current curves of MIS structures with different doping types of the substrate (p-Si and n-Si).…”