International Conference on Space Optics — ICSO 2018 2019
DOI: 10.1117/12.2536152
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TDI CMOS image sensor for Earth Observation

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Cited by 5 publications
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“…This implies that each quarter of line is dedicated to the conversion of a 1 PAN and 1 MS as shown Table 4. More information on the implementation of this device can be found in [10]. The pixel, Figure 21, is a 4 phases (P1…P4) CCD structure, with gated anti-blooming (AB).…”
Section: Tdi Charge Domainmentioning
confidence: 99%
“…This implies that each quarter of line is dedicated to the conversion of a 1 PAN and 1 MS as shown Table 4. More information on the implementation of this device can be found in [10]. The pixel, Figure 21, is a 4 phases (P1…P4) CCD structure, with gated anti-blooming (AB).…”
Section: Tdi Charge Domainmentioning
confidence: 99%
“…L S S x , S y , S z =   cos S y cos(S z ) cos S y sin(S z ) −sin S y sin(S x )sin S y cos(S z ) − cos(S x )sin(S z ) cos(S x )cos(S z ) + sin(S x )sin S y sin(S z ) sin(S x )cos S y cos(S x )sin S y cos(S z ) + sin(S x )sin(S z ) cos(S x )sin S y sin(S z ) − sin(S x )cos(S z ) cos(S x )cos S y   (5) Considering that the assembly-error angle of S x , S y , S z is small, and that the higher order infinite minor term can be ignored, it can be simplified as L 1 .…”
Section: Analysis Of the Optical Coupling In The 2d Compensationmentioning
confidence: 99%
“…The charge transfer driving technology is used to match the charge transfer speeds with the moving line speed of the scene, thus compensating for the the image motion in a dynamic balance. In this compensation method, the 45 • front mirror has a large size, and TDI is a linear array detector, which requires the integration time of TDI CCD to match the image motion velocity [5][6][7][8]. Imaging of the TDI CCD camera must be performed through the push-broom or whisk-broom system, and the operator cannot keep the visual axis pointing at and continuously monitoring the target.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, this register combines a low CTI, a high FWC, and a low dark level. For comparison, state-of-the-art characteristics of CCD-on-CMOS devices are a CTI of 1 × 10 −5 , a FWC of 30 ke − , and a dark current of 3.7 nA/cm 2 [17].…”
Section: Introductionmentioning
confidence: 99%