Te‐Doped Black Phosphorus Field‐Effect Transistors

Yang, Bingchao; Wan, Boshun; Zhou, Qionghua; Wang, Yue; Hu, Wentao; Lv, Weiming; Chen, Qián; Zeng, Zhongming; Wen, Fusheng; Xiang, Jianyong; Yuan, Shijun; Wang, Jinlan; Zhang, Baoshun; Wang, Wenhong; Zhang, Junying; Xu, Bin; Zhao, Zhisheng; Tian, Yongjun; Liu, Zhongyuan

doi:10.1002/adma.201603723

Cited by 262 publications

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“…Black phosphorous (BP) has attracted significant attention due to its remarkable electrical, optical, and optoelectronic properties including tunable direct band gap1, 2, 3 and high carrier mobility 4, 5, 6. Specifically, the sp 3 nonequivalent hybridization between adjacent P atoms results in the puckered structure, leading to in‐plane anisotropic characters such as anisotropic mechanical, electrical, and optical properties 7, 8, 9.…”

Section: Introductionmentioning

confidence: 99%

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

et al. 2018

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Abstract2D GeSe possesses black phosphorous‐analog‐layered structure and shows excellent environmental stability, as well as highly anisotropic in‐plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in optoelectronics. However, most reported GeSe‐based photodetectors show frustrating performance especially in photoresponsivity. Herein, a 2D GeSe‐based phototransistor with an ultrahigh photoresponsivity is demonstrated. Its optimized photoresponsivity can be up to ≈1.6 × 105 A W−1. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the [001] (armchair direction) and [010] (zigzag direction) using transmission electron microscopy and anisotropic Raman characterizations. The angle‐dependent electric and photoresponsive performance is systematically explored. Notably, the GeSe‐based phototransistor shows strong polarization‐dependent photoresponse with a peak/valley ratio of 1.3. Furthermore, the charge carrier mobility along the armchair direction is measured to be 1.85 times larger than that along the zigzag direction.

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Section: Introductionmentioning

confidence: 99%

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

et al. 2018

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“…42 Recently, thin flakes of BP doped with tellurium showed a higher mobility (up to 1850 cm 2 V 1 s 1 at RT) with respect to undoped crystals and, more remarkably, higher stability under ambient exposure. 43 This result provides an interesting solution to the long-standing obstacle of poor environmental stability, circumventing the otherwise mandatory encapsulation of BP via dielectric deposition or mechanical stacking of van der Waals heterostructures, whose fabrication is costly and often demanding.…”

Section: -9mentioning

confidence: 99%

Black phosphorus nanodevices at terahertz frequencies: Photodetectors and future challenges

2017

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The discovery of graphene triggered a rapid rise of unexplored two-dimensional materials and heterostructures having optoelectronic and photonics properties that can be tailored on the nanoscale. Among these materials, black phosphorus (BP) has attracted a remarkable interest thanks to many favorable properties, such as high carrier mobility, in-plane anisotropy, the possibility to alter its transport via electrical gating and direct band-gap, that can be tuned by thickness from 0.3 eV (bulk crystalline) to 1.7 eV (single atomic layer). When integrated in a microscopic field effect transistor (FET), a few-layer BP flake can detect Terahertz (THz) frequency radiation. Remarkably, the in-plane crystalline anisotropy can be exploited to tailor the mechanisms that dominate the photoresponse; a BP-based field effect transistor can be engineered to act as a plasma-wave rectifier, a thermoelectric sensor or a thermal bolometer. Here we present a review on recent research on BP detectors operating from 0.26 THz to 3.4 THz with particular emphasis on the underlying physical mechanisms and the future challenges that are yet to be addressed for making BP the active core of stable and reliable optical and electronic technologies.

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“…The electrical transport characteristics with various channel lengths can be studied in one heterostructure by selecting different source and drain electrodes. [9,17,33,34] While for the pristine SnSeS region, the SnSeS A 1g mode (≈205 and 302 cm −1 ) and another weak broad peak centered at ≈134 cm −1 are observed. Figure 1d depicts the Raman spectra of the corresponding device.…”

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confidence: 95%

“…[20] A tunable multivalued logic performance was also realized in such heterostructure, providing a step forward toward the future logic applications. [33] Diverse diode characteristics are observed with the modulation of band alignment at BP/SnSeS interface. In addition, the wide bandgap ranging from ≈1 to ≈2.1 eV opens the possibility of developing versatile devices by band engineering.…”

mentioning

confidence: 98%

“…Figure 2b displays the corresponding transfer characteristics of the devices, revealing an am-bipolar behavior (p-type dominated) and n-type characteristic for BP and SnSeS, respectively. [4,18,19,33] Figure 2c shows the currentvoltage (I ds -V ds ) characteristics of BP/SnSeS heterostructure as a function of SnSeS channel length without a back-gate bias, where the BP channel is fixed at 15.5 µm. [4,18,19,33] Figure 2c shows the currentvoltage (I ds -V ds ) characteristics of BP/SnSeS heterostructure as a function of SnSeS channel length without a back-gate bias, where the BP channel is fixed at 15.5 µm.…”

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Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

Luo

et al. 2018

Adv Elect Materials

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Graphene, transition metal-dichalcogenides (TMDs), and black phosphorus (BP) are widely exploited as building blocks for such vdWs heterostructure due to their unique electrical and optical properties. [8][9][10][11][12][13] Among these 2D materials, BP has attracted extensive attention because of its high carrier mobility (up to 1000 cm 2 V −1 s −1 at room temperature), moderate tunable direct bandgap on thickness (from 0.3 eV for bulk to 2.0 eV for monolayer), and intrinsic anisotropy arising from the puckered structure. [14][15][16][17] In the past years, a host of BP-based vdWs heterostructures such as graphene/ BP, TMDs/BP, and h-BN/BP architecture, have been fabricated to explore their electronic and photoelectric properties, which have shown promising applications for fieldeffect transistors (FETs), [18][19][20] photodetectors, [8,21,22] flexible devices, [23] memory device, [24] logic circuits, [25] and so on. In the most studied BP/MoS 2 heterostructure, [11,20,25] diverse diode characteristics, including back forward rectifying diode, Zener diode, and forward rectifying diode, have been obtained by BP thickness modulation. [20] A tunable multivalued logic performance was also realized in such heterostructure, providing a step forward toward the future logic applications. [25] Recently, tin-based dichalcogenide SnSe x S 1−x , [26][27][28][29][30][31][32] a layered semiconductor family with environmental friendly and low cost characteristics, has been explored for nanoelectronic applications. In addition, the wide bandgap ranging from ≈1 to ≈2.1 eV opens the possibility of developing versatile devices by band engineering. In this work, we present a realization of BP/SnSeS heterostructure and explore its carrier transport and logic characteristics for the first time. The heterostructure based on Te-doped BP exhibits high carrier mobility and an exceptional ambient stability. [33] Diverse diode characteristics are observed with the modulation of band alignment at BP/SnSeS interface. Furthermore, we demonstrated a multivalued logic state by varying BP length, suggesting that BP/SnSeS heterostructure has promising application in low-power multivalued logic circuits.The schematic of the proposed BP/SnSeS heterostructure is shown in Figure 1a. Both BP and SnSeS flakes were mechanically exfoliated from their bulk crystals. Using a dry transfer technique, the BP flake was first transferred onto the HfO 2 (30 nm)/ Si substrate with prepared electrical pads, and then exfoliated SnSeS flake was artificially stacked atop the BP flake forming BP/SnSeS heterostructure. After that, multiple metal electrodes were fabricated on the top of BP and SnSeS regions by van der Waals (vdW) heterostructures have attracted intensive attention due to their great potential in future functional electronic and optoelectronic devices. Here, a systematic electrical transport investigation on black phosphorus (BP)/SnSeS heterostructures is presented. The BP/SnSeS heterostructure shows diverse diode functional features by modulating BP cha...

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Te‐Doped Black Phosphorus Field‐Effect Transistors

Abstract: Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.

Cited by 262 publications

References 42 publications

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

Black phosphorus nanodevices at terahertz frequencies: Photodetectors and future challenges

Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

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