Te Induced AlAs/GaAs Superlattice Mixing

Abstract

Te enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry.The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations 17 18 -3 of 2x10 to 5x10 cm-.In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.