Impurity-induced disordering in III?V multi-quantum wells and superlattices

Finite aperture tapered unstable resonator lasers

“…Such techniques may employ ion-implantation [41], ion-free vacancy-diffusion [21], or laser shifting [26] to blue-shift the quantum-well band-gap of the grating region relative to the active region. These techniques use impurity diffusion or band-gap intermixing in order to accomplish band-gap shifting.…”

Composition and confinement energies of interdiffused AlGaAs/GaAs single quantum well structures

“…The modification of the optical properties of quantum well (QW) structures by post-growth processing is important and relevant to the fabrication and integration of QW optoelectronic devices [1][2][3][4][5]. Of particular interest is the controlled interdiffusion of atoms across the QW heterointerfaces to tailor the compositional and confinement profiles, and thus the subband structure and optical properties, of the QW [6]. In order to exploit interdiffusion in devices, it is important to know how the structure and properties of the QW structure, which are determined primarily by the subband structure, vary with interdiffusion.…”

Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing

“…In order to modify the device performance and to achieve tunability, a well-controlled interdiffusion technique is essential. By using impurity-induced enhanced intermixing, through ion implantation [16] or diffusion [17], and alternatively by impurity-free vacancy enhanced intermixing technique [18] through a masking process, selective area intermixing can be achieved planarly. These techniques not only have provided the wavelength tunability of devices [19], but it can also improve device performance [20] and are promising technologies for the integration of photonic integrated circuits (IC's) [21].…”