Techniques to print sub-0.2-μm contact holes

Aramaki, Kayo; Hamada, Takahiro; Lee, DongKwan; Okazaki, Hiroshi; Tsugama, Naoko; Pawlowski, Georg

doi:10.1117/12.388360

Cited by 6 publications

(2 citation statements)

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“…The hole size was reduced by more than 150 nm. Aramaki et al [8] have summarized the shrinkage capability of the thermal flow process, RELACS, and CARL as in the range of 20-80, 60-120, and 0-80 nm, respectively. Apparently, our reported technique, Di-RECT, has a wider range.…”

Section: Sub-90-nm Holementioning

confidence: 99%

Dielectric resolution enhancement coating technology (DiRECT) - a sub-90 nm space and hole patterning technology using 248-nm lithography and plasma-enhanced polymerization

Liang

Tsai

Chung

et al. 2003

IEEE Electron Device Lett.

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A plasma polymerization coating process named Dielectric Resolution Enhancement Coating Technology (Di-RECT) is proposed to shrink critical dimensions (CDs) of space and hole patterns. Fluorocarbon plasmas are used as the precursors to coat a polymer layer on the patterned photo-resist. By adding only one processing step, we are able to shrink poly space and contact hole to sub-90 nm-level using 248-nm lithography. The results of our extensive tests have demonstrated the production-worthiness of this technique for its consistent lot-to-lot repeatability, tight within-wafer CD uniformity, and low defect level.

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Section: Sub-90-nm Holementioning

confidence: 99%

Dielectric resolution enhancement coating technology (DiRECT) - a sub-90 nm space and hole patterning technology using 248-nm lithography and plasma-enhanced polymerization

Liang

Tsai

Chung

et al. 2003

IEEE Electron Device Lett.

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“…As a result, the contact holes are shrunk by photoresist reflow. [2][3][4][5][6][7][8][9][10][11][12][13][14][15] The thermal flow process has the advantage of low cost and process simplicity. However, it is difficult to control CDs, because the amount of shrinkage of contact holes is influenced by the pattern layout.…”

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confidence: 99%

Comparison of Flow Models for Photoresist Behavior at Contact Holes in Thermal Flow Processes

Etô¹,

Miyazaki²,

Kondoh³

et al. 2007

J. Electrochem. Soc.

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The behavior of the photoresist between contact holes during the thermal flow process was investigated. When the photoresist width was smaller than 200 nm, the amount of shrinkage of the contact hole increased almost linearly with the photoresist width between contact holes. However, the amount of shrinkage was saturated and rarely changed with the photoresist width when the resist width was larger than 400 nm. We examined three models to investigate this phenomenon. The first one is the simple one-dimensional model, and the second one is the viscoelastic model with constant fluid viscosity. The third one is the viscoelastic model for the Bingham fluid. We calculated the amount of shrinkage of the contact hole vs the photoresist width, and the values calculated using the viscoelastic model for the Bingham fluid was consistent with the measured values. We also synthesized a contact-hole image by expanding this one-dimensional model to two dimensions. The average total hole radius error between the measured and the synthesized image was less than 7 nm, and the calculated image was almost the same as the measured one. We concluded that the viscoelastic model for the Bingham fluid is adequate for describing the photoresist behavior in the thermal flow process.

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Simultaneous suppression of overlap errors and side-lobes in attenuated PSM lithography by rule-based OPC

Lee¹,

Lee²

2005

Microelectronic Engineering

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Techniques to print sub-0.2-μm contact holes

Cited by 6 publications

References 0 publications

Dielectric resolution enhancement coating technology (DiRECT) - a sub-90 nm space and hole patterning technology using 248-nm lithography and plasma-enhanced polymerization

Dielectric resolution enhancement coating technology (DiRECT) - a sub-90 nm space and hole patterning technology using 248-nm lithography and plasma-enhanced polymerization

Comparison of Flow Models for Photoresist Behavior at Contact Holes in Thermal Flow Processes

Simultaneous suppression of overlap errors and side-lobes in attenuated PSM lithography by rule-based OPC

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