Technology and application advancements of uncooled imagers

Norton, Paul; Kohin, Margaret

doi:10.1117/12.604334

Cited by 12 publications

(6 citation statements)

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“…Figure shows the trends in pixel reduction. While the pixel pitch of the first microbolometer reported in 1992 was 50 μm , it was reduced to 25 μm by 2002 , 17 μm by 2007 , and 12 μm in 2013 . Today, the most advanced microbolometer IRFPA has a pixel pitch of 10 μm .…”

Section: Development Trendsmentioning

confidence: 99%

Uncooled infrared focal plane arrays

Kimata

2017

IEEJ Transactions Elec Engng

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After a long incubation period, commercialization of uncooled infrared focal plane arrays (IRFPAs) is progressing rapidly. In the high-end field, pixel pitch reduction is approaching the diffraction limit of optics, and full high-definition IRFPAs have been reported. On the other hand, low-cost infrared array sensors (IRASs), which are small-format IRFPAs for non-imaging applications, are finding new applications in areas such as home appliances. This paper reviews the basics of and advances in uncooled IRFPAs, including IRASs. Some emerging trends in business and applications are also discussed.

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Section: Development Trendsmentioning

confidence: 99%

Uncooled infrared focal plane arrays

Kimata

2017

IEEJ Transactions Elec Engng

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“…causes long response time and, moreover, they are not properly studied and optimized in this spectral range. Emissivity ε of bolometer materials and their absorption coefficient is reducing (see, e.g., [13]). Thus, their sensitivity (D* ~ ε 1/2 ) should diminish with the wavelength growth.…”

Section: Introductionmentioning

confidence: 99%

THz semiconductor hot electron bolometer (SHEB)

Dobrovolsky

Сизов

2006

SPIE Proceedings

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Moderately cooled, fast and diffraction-limited THz bolometer is proposed and its theoretical model is developed. Unlike thermal bolometers, the radiation rapidly heats only electrons in narrow gap bipolar semiconductor without the semiconductor lattice inertial heating. In conditions determined this heating changes generation and recombination processes, that leads to the carrier concentration decrease and semiconductor resistance rise. This rise creates the device output signal. According to this model the SHEB on base of narrow gap mercury cadmium telluride (MCT) semiconductor at temperature of T = 78 K can have detectivity D* ~ (0.3-2)10 7 cmHz 1/2 /W in the range of (0.01-1.5) THz.

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“…The status of these developments has been documented by suppliers [18][19][20][21][22], and the objectives of the work by a recent Army perspective [23]. Generally, 25-ìm pixel microbolometers are now achieving sensitivities comparable to those common for 50-ìm pixel devices of a few years ago.…”

Section: Uncooled Detectorsmentioning

confidence: 99%

“…Generally, 25-ìm pixel microbolometers are now achieving sensitivities comparable to those common for 50-ìm pixel devices of a few years ago. Table 1 summarizes results from recent conference papers [18][19][20][21][22]24]. All of the devices listed in Table 1 are microbolometers based upon vanadium oxide (VO x ) thermistors with the exception of Mitsubishi which uses a series of p-n silicon junctions made with silicon-on-insulator (SOI) technology.…”

Section: Uncooled Detectorsmentioning

confidence: 99%

Third-generation sensors for night vision

Norton¹

2006

Opto-Electronics Review

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Third generation sensors are under development to enhance capabilities for target detection and identification, threat warning, and 3D imaging. Distinct programs for both cooled HgCdTe and uncooled microbolometer devices are part of this thrust. This paper will describe the technology for HgCdle two-colour, high-definition imaging sensors and threat warning devices, avalanche photodiode arrays for 3D imaging, and the supporting technology being developed to enhance the readouts that support these devices. Uncooled detector initiatives will also be described to reduce pixel size in conjunction with the production of 480×640 arrays. Finally, efforts are also beginning to move both photon and thermal detectors closer to radiative-limited performance while simultaneously reducing the cooling requirements for photon detectors.

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Technology and application advancements of uncooled imagers

Cited by 12 publications

References 0 publications

Uncooled infrared focal plane arrays

Uncooled infrared focal plane arrays

THz semiconductor hot electron bolometer (SHEB)

Third-generation sensors for night vision

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