Technology and Properties of PBZTS Ceramics

Abstract

This paper presents the results of preparing and investigating the solid solution of lead barium zirconate titanate stannate (Pb1−xBax)[(Zr1−yTiy)1−zSnz]O3 with x = 0.25, y = 0.35 and z = 0.00, 0.02, 0.04, 0.08, 0.10. Ceramic samples were obtained from oxides and carbonates using conventional ceramic technology and pressureless sintering. The results of Energy‐dispersive X‐ray spectroscopy (EDS) investigations, XRD studies, as well as dielectric measurements and electromechanical investigations are presented. It was stated that at the room temperature, the structure of the investigated samples is pseudo‐cubic, typical for relaxors. Maximal value of elementary cell parameter is observed for z = 0.02, and for higher values of z, we observe almost linear decrease with increasing z. It was found that with increasing content of the Sn, the temperature Tm at which dielectric permittivity reaches its maximum decreases. Analyzing P‐E hysteresis loops it was stated that the phase transition in the investigated samples takes place at temperatures approximately 100°C lower than the temperature of the dielectric permittivity maximum. The temperature of phase transition was calculated also from hysteresis loops and compared with that obtained from measurements of dielectric permittivity.

Electrophysical properties of the multicomponent PBZT-type ceramics doped by Sn4+

“…For all samples with increasing temperature the coercive fields decrease and in this f 0 -pre-exponential factor; E a -activation energy for Vogel-Fulcher relation, T VF -Vogel-Fulcher temperature below which the freezing process take place, k -Boltzmann constant same time the values of P R remnant polarization decrease. Comparing results of ferroelectric measurements of the PBZT/Sn ceramics obtained at higher temperatures and longer time [28], we can conclude that the values of remnant polarization P R and coercive field E C are higher. Rectangularity coefficient of the hysieresis loop was calculated from the following formula (8):…”

“…the disappearance of domains at T m temperature abruptly reduces the dielectric loss or an increase of the ac conductivity that increases loss tangent with the increase in temperature [42]. Comparing the obtained PBZT/Sn ceramics with the ones obtained in [28], we can say that all ceramic samples show slightly higher values of dielectric loss in higher frequency.…”

“…Introduction of the Sn 4+ ion into the B-position of the perovskite structure causes changes of parameters important for applications in devices, such as actuators which convert energy from one form to another and pulse capacitors which accumulate charges. The results of the research presented in the paper were compared also with the previous work [28], in which the authors obtained this material using different technological conditions (higher sintering temperature 1300°C and longer sintering time 5 h). In the present work, we continue the investigations from our works [7,28].…”

“…The results of the research presented in the paper were compared also with the previous work [28], in which the authors obtained this material using different technological conditions (higher sintering temperature 1300°C and longer sintering time 5 h). In the present work, we continue the investigations from our works [7,28].…”

“…Additionally, the tin admixture decreases the maximum of dielectric constant at T m temperature. Comparing dielectric properties of obtained PBZT/ Sn with ceramics obtained at higher sintering temperature and longer time [28], all investigated samples exhibit higher values of dielectric constants at RT as well as at T m temperature. Also, the phase transition from the ferroelectric to paraelectric phase takes place in a narrower temperature range for the PBZT/Sn ceramic samples investigated in the present paper.…”