Technology CAD (TCAD) Simulations of Mg2Si/Si Heterojunction Photodetector Based on the Thickness Effect

Abstract

Research on infrared detectors has been widely reported in the literature. For infrared detectors, PbS, InGaAs, PbSe, InSb, and HgxCd1-xTe materials are the most widely used and have been explored for photodetection applications. However, these are toxic and harmful substances which are not conducive to the sustainable development of infrared detectors and are not eco-friendly. Mg2Si is a green, healthy, and sustainable semiconductor material that has the potential to replace these toxic and damaging photoelectric materials, making photoelectric detectors (PDs) green, healthy, and sustainable. In this work, we report on the results of our simulation studies on the PN junction Mg2Si/Si heterojunction PD. A model structure of Mg2Si/Si heterojunction PD has been built. The effects of Mg2Si and Si layer thickness on the optical and electrical performance of Mg2Si/Si heterojunction PD are discussed. For the purpose of this analysis, we consider electrical performance parameters such as I–V curve, external quantum efficiency (EQE), responsivity, noise equivalent power (NEP), detectivity, on-off ratio, response time, and recovery time. The simulation results show that the Mg2Si/Si heterojunction PD shows optimum performance when the thickness of Si and Mg2Si layers are 300 nm and 280 nm, respectively. For the optimized structure, the reverse breakdown voltage was found to be −23.61 V, the forward conduction voltage was 0.51 V, the dark current was 5.58 × 10−13 A, and the EQE was 88.98%. The responsivity was found to be 0.437 A/W, the NEP was 6.38 × 10−12 WHz1/2, and the detectivity was 1.567 × 1011 Jones. With the on-off ratio of 1566, the response time was found to be 0.76 ns and the recovery time was 5.75 ns. The EQE and responsivity peak wavelength of PD show a redshift as the thickness of Mg2Si increases. The Mg2Si heterojunction PD can effectively detect infrared light in the wavelength range of 400 to 1400 nm. The simulation results can be utilized to drive the development of green Mg2Si/Si heterojunction PD in the future.

Textured Stainless Steel as a Platform for Black Mg2Si/Si Heterojunction Solar Cells with Advanced Photovoltaic Performance

“…After determining the most optimal texturing, passivation and Si overgrowth conditions to obtain Si-compatible templates for HSC development, we focused on the formation of the Mg 2 Si-based solar light absorbing layer. On one hand, Mg 2 Si possesses outstanding optoelectronic properties to be applied as a VIS-NIR light absorber and photodetector with high Si-compatibility [ 46 , 47 , 48 , 49 , 50 , 51 ]. On the other hand, we have already demonstrated that silicidation of the textured Si surface such as b-Si with magnesium resulted in a new wide band optical absorber called “black silicide” [ 29 ], demonstrating a very high PV potential.…”

Influence of multilayer graphene doping concentrations on detection properties of MLG/Mg2Si/Si heterojunction photodetector

“…Due to their low bandgap energy (1.12 eV), Si PDs have a narrow spectrum range with a response cut-off at 1100 nm [3,[4][5][6]. The photo response cut-off wavelength of conventional Si PDs can be increased to more than 1100 nm by fabricating heterojunction PDs with a detection wavelength range of 400 to 1500 nm out of the environmentally benign semiconductor material Mg 2 Si [7]. The earth's crust is rich in C, Mg, and Si, which are non-toxic and devoid of pollution and exhibit qualities that support sustainable development.…”