Technology development of 3D detectors for high-energy physics and imaging

Pellegrini, G.; Roy, P.; Bates, R. L.; Jones, David R.H.; Mathieson, Keith; Melone, J.; O’Shea, V.; Smith, K. M.; Thayne, I.G.; Thornton, P. R.; Linnros, Jan; Rodden, W S O; Rahman, M.

doi:10.1016/s0168-9002(02)00939-7

Cited by 51 publications

(16 citation statements)

References 4 publications

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“…e main advantage of this approach is that the carriers have to travel short dri distances in the bulk of the detector, resulting in fast response, enhanced detection efficiency, and high radiation hardness; and, consequently, promising applications appear feasible in the �elds of X-ray medical imaging or particle tracking in high energy experiments [112,113]. A remarkable example of such applications was given by Olivero et al [114], who performed IBIC experiments to characterize the charge collection efficiency in a monocrystalline diamond detector with buried microelectrodes fabricated by deep ion beam lithography.…”

Section: Discussionmentioning

confidence: 99%

Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Vittone

2013

ISRN Materials Science

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e ion beam induced charge (IBIC) technique is a scanning microscopy technique which uses �nely focused MeV ion beams as probes to measure and image the transport properties of semiconductor materials and devices. Its success stems from the combination of three main factors: the �rst is strictly technical and lies in the availability of laboratories and expertise around the world to provide scanning MeV ion beams focused down to submicrometer spots. e second reason stems from the peculiarity of MeV ion interaction with matter, due to the ability to penetrate tens of micrometers with reduced scattering and to excite a high number of free carriers to produce a measurable charge pulse from each incident ion. Last, but not least, is the availability of a robust theoretical model able to extract from the measurements all the parameters for an exhaustive characterization of the semiconductor. is paper is focused on these two latter issues, which are examined by reviewing the current status of IBIC by a comprehensive survey of the theoretical model and remarkable examples of IBIC applications and of ancillary techniques to the study of advanced semiconductor materials and devices.

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Section: Discussionmentioning

confidence: 99%

Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Vittone

2013

ISRN Materials Science

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“…Let us now discuss a three-dimensional (3D) design in which the electrodes extend deep into the semiconductor, the interelectrode space constituting an active region. This concept is presented by Roy et al [47], Pellegrini et al [48], and Da Via et al [49]. It represents an imaginative approach to the problem of maximizing both x-ray absorption and CCE.…”

Section: D Sensor Arraymentioning

confidence: 99%

GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

2005

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An attempt is made to analyze and summarize the literature data on hybrid x-ray GaAs pixel detectors designed for medical imaging. Criteria are stated for selecting a semiconductor material. It is shown that GaAs is currently preferable to the other semiconductor materials. Detector figures of merit used to select a semiconductor material and a process technology are listed. Major types of x-ray detector based on bulk-grown or epitaxial GaAs are described, namely, the planar Schottky, the planar p-i-n, and the 3D detector. The influence is considered of different process steps (contact formation, passivation coating, hybridization, etc.) on detector figures of merit. Monolithic technology is briefly discussed.

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“…The p-type pores were etched and then diffusion doped with boron to a doping concentration of 10 19 cm À3 [9]. Following the doping process, the ntype pores were etched.…”

Section: Fabricationmentioning

confidence: 99%