Technology development of high purity germanium crystals for radiation detectors

Абросимов, Н. В.; Czupalla, M.; Dropka, Natasha; Fischer, Joerg; Gybin, Alexander; Irmscher, K.; Janicskó-Csáthy, J.; Juda, U.; Kayser, Stefan; Miller, W.; Pietsch, Mike; Kießling, Frank M.

doi:10.1016/j.jcrysgro.2019.125396

Cited by 28 publications

(16 citation statements)

References 17 publications

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“…Thus, the observed tendency in EPD was reflected in the numerical results. The EPD was (7) The effective strain is given by τ eff = √ J 2 − D √ N disl with J 2 = 1 2 i,j S 2 ij and S ij = σ ij = δ ij 1 3 k σ kk . D is the hardening factor.…”

Section: Resultsmentioning

confidence: 99%

“…However, a further improvement of the model was required, where the plastic strain should be included in the stress computation (Equation ( 6)), which was demonstrated by Helbig et al [31]. In addition, the dislocation density should be computed using Equation (7).…”

Section: Resultsmentioning

confidence: 99%

“…For the Czochralski growth of high purity Ge single crystals, a growth furnace was constructed at IKZ. Details were described elsewhere [7]. A sketch for the axisymmetric calculation is presented in Figure 1.…”

Section: Growth Experiments and Characterizationmentioning

confidence: 99%

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Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer

et al. 2019

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A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process in a quasi-time dependent mode. The growth velocity was computed from the geometrical changes in melt and crystal due to pulling for every stage, for which the thermal and stress fields were computed by using the open source software Elmer. The method was applied to the Czochralski growth of Ge crystals by inductive heating. From a series of growth experiments, we chose one as a reference to check the validity of the scheme with respect to this Czochralski process. A good agreement both for the shapes of the melt/crystal interface at various time steps and the change in power consumption with process time was observed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer

et al. 2019

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“…Single-crystalline HPGe (net charge carrier density <10 12 cm À3 ) was grown by the Czochralski method using zone refined Ge bars with high purity, as described in great detail elsewhere (Abrosimov et al, 2020). The investigated crystals were grown in the [001] direction under different gas atmospheres.…”

Section: Methodsmentioning

confidence: 99%

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

et al. 2020

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White-beam X-ray topography has been performed to provide direct evidence of micro-voids in dislocation-free high-purity germanium single crystals. The voids are visible because of a dynamical diffraction contrast. It is shown that voids occur only in dislocation-free parts of the crystal and do not show up in regions with homogeneous and moderate dislocation density. It is further suggested that the voids originate from clustering of vacancies during the growth process. A general method is proposed to verify the presence of voids for any crystalline material of high structural perfection.

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“…Germanium detectors manufactured from enriched 76 Ge, are particularly well-suited for the neutrino-less double beta decay (0νββ) searches thanks to a higher detection efficiency and energy resolution [28]. These types of detectors are used in nuclear physics experiments like GERDA, Majorana Demonstrator as well as LEGEND [29][30][31][32][33].…”

Section: Icp-ms: the Right Tool For Monitoring The Recycling Process mentioning

confidence: 99%

Material Screening with Mass Spectrometry

Marchegiani

Ferella

Nisi

2021

Physics

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Inductively coupled plasma mass spectrometry is a powerful analytical technique. Because of its sensitivity, accuracy, multielement capability, high throughput, rapid analysis times and low detection limits, it is able to determine simultaneously long-lived radionuclides at trace and ultra-trace levels as well as isotope ratios. It has been increasingly applied in the framework of rare events experiments like those investigating the nature of dark matter and neutrinos, where the screening and selection of extremely radiopure materials for the experimental apparatus is crucial. Here, the inductively coupled plasma mass spectrometry (ICP-MS) measurements of the chemical purity of a Cs2HfCl6 crystal scintillator used to study α decay of naturally occurring Hf isotopes and its own raw materials are reported. Moreover, in the framework of the GERDA/LEGEND experiment, an overview of the ICP-MS results to monitor the recycling process of enriched germanium scraps is shown. Significant outcomes, such as low detection limits despite the small amount of sample to analyze and fast ICP-MS results, have been achieved in response to the challenges required by modern low background experiments.

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Technology development of high purity germanium crystals for radiation detectors

Cited by 28 publications

References 17 publications

Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer

Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer

Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

Material Screening with Mass Spectrometry

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