Technology downscaling worsening radiation effects in bulk: SOI to the rescue

Roché, Philippe; Autran, Jean‐Luc; Gasiot, Gilles; Munteanu, Daniéla

doi:10.1109/iedm.2013.6724728

Cited by 103 publications

(61 citation statements)

References 2 publications

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“…Natural radiation at ground level, including both terrestrial cosmic rays and telluric radioactivity (alpha decay from radioactive ultra-traces in materials), is considered today as a major reliability issue for integrated circuits (IC), since they are increasingly sensitive to this radiation as long as CMOS technologies scale down [1]. The basic mechanism taking place when an ionizing particle crosses a circuit is the generation in the semiconductor region of a highdensity charge track; the generated charge can be collected at circuit level through biased contacts and especially reverse-biased drain junctions and create parasitic transient currents at the circuit nodes.…”

Section: Introductionmentioning

confidence: 99%

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Autran¹,

Munteanu²,

Moindjie³

et al. 2016

Modeling and Simulation in Engineering Sciences

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This chapter describes a new computational approach for accurately modeling radiation-induced single-event transient current and charge collection at circuit level. This approach, called random-walk drift-diffusion (RWDD), is a fast Monte Carlo particle method based on a random-walk process that takes into account both diffusion and drift of carriers in a non-constant electric field both in space and time. After introducing the physical insights of the RWDD model, the chapter details the practical implementation of the method using an object-oriented programming language and its parallelization on graphical processing units. Besides, the capability of the approach to treat multiple node charge collection is presented. The chapter also details the coupling of the model either with an internal routine or with SPICE for circuit solving. Finally, the proposed approach is illustrated at device and circuit level, considering four different test vehicles in 65 nm technologies: a stand-alone transistor, a CMOS inverter, a SRAM cell and a flip-flop circuit. RWDD results are compared with data obtained from a full three-dimensional (3D) numerical approach (TCAD simulations) at transistor level. The importance of the circuit feedback on the charge-collection process is also demonstrated for devices connected to other circuit nodes.

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Section: Introductionmentioning

confidence: 99%

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Autran¹,

Munteanu²,

Moindjie³

et al. 2016

Modeling and Simulation in Engineering Sciences

Self Cite

View full text Add to dashboard Cite

show abstract

“…2), are also susceptible to represent a new radiation threat for deca-nanometer technologies, specially operated at ultra low voltages. The uncertainty of the terrestrial muon flux below a few hundred MeV does not yet enable an accurate estimation of their direct SER impact at ground level, even if 1000× projections have been made [34]. Moreover, when negative muons have lost their kinetic energy and stop, about 35% spontaneously decay.…”

Section: Radiation Response Of Advanced Technologiesmentioning

confidence: 98%

“…Indeed, the SEE susceptibility of advanced technologies is expected to evolve under the influence of several factors since extrinsic radiation does not scale down. The most important are [34,35]: 1) the reduction of the critical charge, 2) the reduction of the per-bit crosssections presented to ionizing particles, 3) the reduction of the energy-deposition volumes traversed by the particle at front-end level, 4) the increase of the particle region of influence at layout level and 5) the amplification of parasitic effects as a function of device architecture considered.…”

Section: Radiation Response Of Advanced Technologiesmentioning

confidence: 99%

Radiation and COTS at ground level

Autran

Munteanu

2015

Microelectronics Reliability

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“…However, it was shown that in practice SOI transistor ICs were also susceptible to charged particle effects [15]. More recent scaled bulk devices have shown significant improvement in the effects caused by heavy ions, such as soft error rates in memory components, and especially some SOI technologies like the 28-nm FDSOI have achieved major improvement (up to 110×) compared to their bulk counterpart [16].…”

Section: Silicon-on-insulator and Shallow Trench Isolationmentioning

confidence: 99%

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

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-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).

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Technology downscaling worsening radiation effects in bulk: SOI to the rescue

Cited by 103 publications

References 2 publications

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Charge Collection Physical Modeling for Soft Error Rate Computational Simulation in Digital Circuits

Radiation and COTS at ground level

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

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