Technology of InP-based 1.55-μm ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers

Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion

“…Figure 1a and b is two curves corresponding to the transmittances measured from the p-type InP layer formed by using Zn 3 P 2 and Zn 3 As 2 sources, respectively. 8 The cause for the oxide formation is presumably the oxygen-related surface contamination. 1a The Zn 3 As 2 and Zn 3 P 2 were used as Zn-diffusion sources to form a p-region in undoped-InP wafers.…”

“…In Fig. 8 The thin InAs composition would introduce the absorption related to the energy bandgap in the range 1,000-1,700 nm in addition to the free-carrier absorption. The p-type InP formed by Zn diffusion from a Zn 3 P 2 source has higher transmittance over the testing-spectrum range 1,000-1,700 nm versus Zn diffusion from a Zn 3 As 2 source.…”

Ultrafast photodetectors and receiver

“…Owing to the good potential for monolithic integration, the ability to form twin-type and balanced type detectors and the good linearity from low signal levels to high power values, the side-illuminated waveguide-integrated photodetector types are promising [15][16][17]. This basic detector type was optimized, now to achieve a 3-dB bandwidth in excess of 100 GHz.…”

Fibre Radio Technology

“…The MIC approach also ensures device uniformity. Several monolithically integrated MIC photoreceivers (incorporating a photodetector and amplifier) with good conversion efficiencies have been demonstrated which may be suitable for mm-wave fibre radio systems operating at 28 GHz [64] [65,68], although there are still some key technical issues associated with MIC technology that must be addressed. These include low yields, limited heat dissipation for the RF amplifiers, as well as the ability to integrate the electrical and optical components directly with the antennas.…”